Vishay Siliconix
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
SQD50N10-8M9L_GE3
Voir les détails DataSheets

SQD50N10-8M9L_GE3

Product Overview

Category

The SQD50N10-8M9L_GE3 belongs to the category of power MOSFETs.

Use

It is used in various electronic devices and circuits for switching and amplification purposes.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SQD50N10-8M9L_GE3 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 50A
  • On-Resistance (RDS(on)): 8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 45nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQD50N10-8M9L_GE3 has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High voltage tolerance
  • Low conduction losses
  • Fast switching characteristics
  • Suitable for high-frequency applications

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Enhanced system reliability
  • Suitable for demanding industrial environments

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly

Working Principles

The MOSFET operates by controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal. When a sufficient gate-source voltage is applied, the MOSFET switches on, allowing current to flow through it.

Detailed Application Field Plans

The SQD50N10-8M9L_GE3 is widely used in: - Switching power supplies - Motor control systems - Inverters and converters - Audio amplifiers - LED lighting applications

Detailed and Complete Alternative Models

  • IRF540N
  • FDP8870
  • STP55NF06L

In conclusion, the SQD50N10-8M9L_GE3 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it an essential component in modern power electronics.

[Word Count: 320]

Énumérez 10 questions et réponses courantes liées à l'application de SQD50N10-8M9L_GE3 dans les solutions techniques

Sure, here are 10 common questions and answers related to the application of SQD50N10-8M9L_GE3 in technical solutions:

  1. What is the maximum drain current for SQD50N10-8M9L_GE3?

    • The maximum drain current for SQD50N10-8M9L_GE3 is 50A.

  2. What is the gate-source voltage for SQD50N10-8M9L_GE3?

    • The gate-source voltage for SQD50N10-8M9L_GE3 is ±20V.

  3. What is the on-resistance for SQD50N10-8M9L_GE3?

    • The on-resistance for SQD50N10-8M9L_GE3 is 0.01 ohms.

  4. What is the power dissipation of SQD50N10-8M9L_GE3?

    • The power dissipation of SQD50N10-8M9L_GE3 is 180W.

  5. What are the typical applications for SQD50N10-8M9L_GE3?

    • Typical applications for SQD50N10-8M9L_GE3 include motor control, power supplies, and inverters.

  6. What is the operating temperature range for SQD50N10-8M9L_GE3?

    • The operating temperature range for SQD50N10-8M9L_GE3 is -55°C to 175°C.

  7. Does SQD50N10-8M9L_GE3 have built-in protection features?

    • Yes, SQD50N10-8M9L_GE3 has built-in overcurrent protection and thermal shutdown.

  8. Can SQD50N10-8M9L_GE3 be used in automotive applications?

    • Yes, SQD50N10-8M9L_GE3 is suitable for automotive applications.

  9. What is the package type for SQD50N10-8M9L_GE3?

    • SQD50N10-8M9L_GE3 comes in a TO-252-3 (DPAK) package.

  10. Is SQD50N10-8M9L_GE3 RoHS compliant?

    • Yes, SQD50N10-8M9L_GE3 is RoHS compliant.

I hope these answers are helpful! Let me know if you need further assistance.