SIDR392DP-T1-GE3

Introduction

The SIDR392DP-T1-GE3 is a high-performance semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: Power management applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Advanced power management solution
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 100A
• On-Resistance: 2.9mΩ
• Gate Charge: 22nC
• Operating Temperature Range: -55°C to 150°C
• Package Type: DFN5x6

Detailed Pin Configuration

The SIDR392DP-T1-GE3 features a standard pin configuration with the following pins: 1. Source 2. Gate 3. Drain 4. N/C (Not Connected) 5. Source

Functional Features

• High Efficiency: Enables energy-efficient power management
• Low On-Resistance: Minimizes power losses and heat generation
• Fast Switching Speed: Facilitates rapid control in power management applications

Advantages and Disadvantages

Advantages

• High efficiency
• Low on-resistance
• Fast switching speed
• Compact package size

Disadvantages

• Higher cost compared to traditional MOSFETs
• Sensitive to voltage spikes

Working Principles

The SIDR392DP-T1-GE3 operates based on the principle of controlling the flow of current between the drain and source terminals using the gate voltage. By modulating the gate voltage, the MOSFET can efficiently manage power flow in various applications.

Detailed Application Field Plans

The SIDR392DP-T1-GE3 is ideally suited for the following application fields: - DC-DC Converters - Motor Control Systems - Power Supplies - Battery Management Systems - LED Lighting

Detailed and Complete Alternative Models

For users seeking alternative models, the following options are available: - SIDR391DP-T1-GE3: Similar specifications with a lower continuous drain current rating - SIDR393DP-T1-GE3: Higher continuous drain current rating with comparable characteristics - SIDR394DP-T1-GE3: Enhanced voltage rating and gate charge specifications

In conclusion, the SIDR392DP-T1-GE3 offers high performance and efficiency in power management applications, making it a valuable component in modern electronic systems.

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