Acheter Toshiba Semiconductor and Storage TK4A65DA(STA4,Q,M) MOSFET N-CH 650V 3.5A TO-220SIS - YYIC

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TK4A65DA(STA4,Q,M)

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TK4A65DA(STA4,Q,M)

MOSFET N-CH 650V 3.5A TO-220SIS

Numéro d'article

TK4A65DA(STA4,Q,M)

Fabricant/Marque

Toshiba Semiconductor and Storage

Série

π-MOSVII

Statut de la pièce

Active

Emballage

Tube

Technologie

MOSFET (Metal Oxide)

Température de fonctionnement

150°C (TJ)

Type de montage

Through Hole

Colis/Caisse

TO-220-3 Full Pack

Package d'appareil du fournisseur

TO-220SIS

Dissipation de puissance (maximum)

35W (Tc)

Type FET

N-Channel

Fonctionnalité FET

-

Tension drain-source (Vdss)

650V

Courant - Drain continu (Id) à 25 °C

3.5A (Ta)

Rds activé (Max) @ Id, Vgs

1.9 Ohm @ 1.8A, 10V

Vgs(e) (Max) @ Id

4.4V @ 1mA

Charge de porte (Qg) (Max) @ Vgs

12nC @ 10V

Capacité d'entrée (Ciss) (Max) @ Vds

600pF @ 25V

Tension d'entraînement (Max Rds On, Min Rds On)

10V

Vgs (Max)

±30V

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