The SQM200N04-1M1L_GE3 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various electronic applications due to its specific characteristics and functional features.
The SQM200N04-1M1L_GE3 follows the standard pin configuration for a TO-252 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
The SQM200N04-1M1L_GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high currents with minimal power loss.
The SQM200N04-1M1L_GE3 finds extensive use in various applications including: - Switching power supplies - Motor control circuits - Inverters and converters - Automotive electronics - Industrial automation systems
Some alternative models to the SQM200N04-1M1L_GE3 include: - IRF3205 - FDP8878 - STP80NF70
In conclusion, the SQM200N04-1M1L_GE3 power MOSFET offers high-performance characteristics suitable for demanding electronic applications, making it a popular choice among design engineers and electronic enthusiasts.
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What is the maximum voltage rating of SQM200N04-1M1L_GE3?
What is the continuous drain current of SQM200N04-1M1L_GE3?
What is the on-resistance of SQM200N04-1M1L_GE3?
Can SQM200N04-1M1L_GE3 be used in automotive applications?
What is the operating temperature range of SQM200N04-1M1L_GE3?
Is SQM200N04-1M1L_GE3 RoHS compliant?
What type of package does SQM200N04-1M1L_GE3 come in?
Does SQM200N04-1M1L_GE3 have overcurrent protection?
What are the typical applications for SQM200N04-1M1L_GE3?
Is SQM200N04-1M1L_GE3 suitable for high-power industrial equipment?