SISS28DN-T1-GE3

Introduction

The SISS28DN-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management and control
• Packaging/Quantity: Available in reels with varying quantities

Specifications

The SISS28DN-T1-GE3 has the following specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 40A - On-Resistance (RDS(on)): 4.5mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 45nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SISS28DN-T1-GE3 features a standard pin configuration with the following pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• High voltage capability allows for use in various power applications
• Low on-resistance minimizes power loss and improves efficiency
• Fast switching speed enables rapid response in switching applications

Advantages and Disadvantages

Advantages

• High voltage capability suitable for diverse applications
• Low on-resistance for improved efficiency
• Fast switching speed for responsive performance

Disadvantages

• Sensitive to static electricity and voltage spikes
• Requires careful handling and protection in high-voltage environments

Working Principles

The SISS28DN-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SISS28DN-T1-GE3 finds extensive use in the following application fields: - Power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SISS28DN-T1-GE3 include: - SISS30DN-T1-GE3 - SISS25DN-T1-GE3 - SISS35DN-T1-GE3

In conclusion, the SISS28DN-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile component in various electronic applications.

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