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SIS444DN-T1-GE3

SIS444DN-T1-GE3

Introduction

The SIS444DN-T1-GE3 is a high-performance MOSFET designed for use in various electronic applications. This entry provides an overview of the product, including its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power Management
  • Characteristics: High Efficiency, Low Power Consumption
  • Package: DFN (Dual Flat No-Lead)
  • Essence: MOSFET Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Model: SIS444DN-T1-GE3
  • Voltage Rating: 30V
  • Current Rating: 12A
  • RDS(ON): 4.5mΩ
  • Gate Charge: 8.6nC
  • Operating Temperature: -55°C to 150°C
  • Mounting Type: Surface Mount
  • Lead-Free Status: Lead-Free

Detailed Pin Configuration

The SIS444DN-T1-GE3 features a standard pin configuration with three pins: Gate, Drain, and Source. The pinout is as follows: - Pin 1 (Gate): Input for controlling the MOSFET - Pin 2 (Drain): Output terminal for the MOSFET - Pin 3 (Source): Common terminal for the MOSFET

Functional Features

  • High Efficiency: The MOSFET offers low RDS(ON) and gate charge, resulting in high efficiency power management.
  • Fast Switching: It provides fast switching characteristics, suitable for applications requiring rapid response times.
  • Low Power Consumption: The device minimizes power losses, making it ideal for energy-efficient designs.

Advantages and Disadvantages

Advantages

  • High Efficiency
  • Fast Switching Speed
  • Low Power Consumption
  • Compact Package Size

Disadvantages

  • Limited Voltage and Current Ratings
  • Sensitivity to ESD (Electrostatic Discharge)

Working Principles

The SIS444DN-T1-GE3 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When a voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals, allowing for efficient power management and switching operations.

Detailed Application Field Plans

The SIS444DN-T1-GE3 is well-suited for a range of applications, including: - DC-DC Converters - Power Supplies - Motor Control - LED Lighting - Battery Management Systems

Detailed and Complete Alternative Models

For users seeking alternative models, the following MOSFETs can be considered: - SIS441DN-T1-GE3: Similar specifications with a lower current rating - SIS446DN-T1-GE3: Higher current rating and lower RDS(ON) for increased power handling

In conclusion, the SIS444DN-T1-GE3 MOSFET offers high efficiency, fast switching, and low power consumption, making it a versatile component for various power management applications.

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Énumérez 10 questions et réponses courantes liées à l'application de SIS444DN-T1-GE3 dans les solutions techniques

  1. What is the maximum operating temperature of SIS444DN-T1-GE3?

    • The maximum operating temperature of SIS444DN-T1-GE3 is 150°C.
  2. What is the typical input capacitance of SIS444DN-T1-GE3?

    • The typical input capacitance of SIS444DN-T1-GE3 is 2200pF.
  3. What is the maximum drain-source voltage of SIS444DN-T1-GE3?

    • The maximum drain-source voltage of SIS444DN-T1-GE3 is 30V.
  4. What is the typical on-resistance of SIS444DN-T1-GE3?

    • The typical on-resistance of SIS444DN-T1-GE3 is 6.5mΩ.
  5. What is the gate charge of SIS444DN-T1-GE3 at different voltages?

    • At Vgs = 10V, the gate charge is typically 8.5nC, and at Vgs = 4.5V, the gate charge is typically 14nC.
  6. What are the recommended applications for SIS444DN-T1-GE3?

    • SIS444DN-T1-GE3 is commonly used in synchronous rectification, motor control, and power management applications.
  7. What is the typical package type of SIS444DN-T1-GE3?

    • The typical package type of SIS444DN-T1-GE3 is PowerPAK® SO-8.
  8. What is the maximum continuous drain current of SIS444DN-T1-GE3?

    • The maximum continuous drain current of SIS444DN-T1-GE3 is 120A.
  9. Does SIS444DN-T1-GE3 have built-in ESD protection?

    • Yes, SIS444DN-T1-GE3 features built-in ESD protection, enhancing its reliability in various applications.
  10. What are the key advantages of using SIS444DN-T1-GE3 in technical solutions?

    • Some key advantages of SIS444DN-T1-GE3 include low on-resistance, high current capability, and efficient power management, making it suitable for a wide range of applications.