SIR872DP-T1-GE3

Product Overview

Category

The SIR872DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

• High power handling capability
• Low on-resistance
• Fast switching speed
• Enhanced thermal performance

Package

The SIR872DP-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This product is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity per reel, typically 2500 units.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 100A
• RDS(ON) (Max) @ VGS = 10V: 1.4mΩ
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIR872DP-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Gate 3. Source 4. Source 5. Drain 6. Drain 7. N/C 8. N/C

Functional Features

• Low conduction losses
• High efficiency
• Robustness against thermal stress
• Enhanced ESD protection

Advantages

• High power density
• Improved system reliability
• Reduced cooling requirements
• Enhanced system efficiency

Disadvantages

• Sensitivity to voltage spikes
• Higher cost compared to traditional MOSFETs

Working Principles

The SIR872DP-T1-GE3 operates based on the principle of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a gate-source voltage.

Detailed Application Field Plans

This power MOSFET is widely utilized in various applications including: - Switched-mode power supplies - Motor control - Battery management systems - LED lighting - Automotive power distribution

Detailed and Complete Alternative Models

Some alternative models to the SIR872DP-T1-GE3 include: - SiR878DP-T1-GE3 - SiR880DP-T1-GE3 - SiR882DP-T1-GE3

In conclusion, the SIR872DP-T1-GE3 power MOSFET offers high-performance characteristics and is well-suited for a wide range of power management applications, despite its sensitivity to voltage spikes and higher cost compared to traditional MOSFETs.

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