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SIHG73N60AE-GE3
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-state resistance - Package: TO-247AC - Essence: Efficient power management - Packaging/Quantity: Bulk packaging, quantity varies
Specifications: - Voltage Rating: 600V - Current Rating: 73A - RDS(ON): 0.065Ω - Gate Charge (Qg): 110nC - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - High voltage capability - Low gate charge - Fast switching speed - Low on-state resistance - Avalanche energy specified - Enhanced body diode dV/dt and di/dt capability
Advantages: - Efficient power management - Suitable for high-power applications - Low conduction losses - Fast switching performance - Reliable operation in harsh environments
Disadvantages: - Higher cost compared to lower-rated MOSFETs - Requires careful handling due to high voltage capability
Working Principles: The SIHG73N60AE-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient voltage is applied to the gate terminal, it allows the flow of current between the drain and source terminals, enabling efficient power switching.
Detailed Application Field Plans: - Industrial motor drives - Solar inverters - Uninterruptible power supplies (UPS) - Switched-mode power supplies (SMPS) - Electric vehicle charging systems
Detailed and Complete Alternative Models: - Infineon IPP073N06N3 G - STMicroelectronics STW75N60M2 - ON Semiconductor NGB8207NT4G - Toshiba TK31N60X
This comprehensive entry provides a detailed overview of the SIHG73N60AE-GE3 Power MOSFET, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Énumérez 10 questions et réponses courantes liées à l'application de SIHG73N60AE-GE3 dans les solutions techniques
What is the maximum drain-source voltage of SIHG73N60AE-GE3?
- The maximum drain-source voltage is 600V.
What is the continuous drain current rating of SIHG73N60AE-GE3?
- The continuous drain current rating is 73A.
What is the on-state resistance (RDS(on)) of SIHG73N60AE-GE3?
- The on-state resistance is typically 0.038 ohms.
Can SIHG73N60AE-GE3 be used in high-power applications?
- Yes, it is suitable for high-power applications due to its high current and voltage ratings.
What type of package does SIHG73N60AE-GE3 come in?
- It comes in a TO-247 package.
Is SIHG73N60AE-GE3 suitable for switching power supplies?
- Yes, it is suitable for use in switching power supplies.
What is the gate threshold voltage of SIHG73N60AE-GE3?
- The gate threshold voltage is typically 4V.
Does SIHG73N60AE-GE3 have built-in protection features?
- It has built-in diode protection and is designed for ruggedness and reliability.
Can SIHG73N60AE-GE3 be used in automotive applications?
- Yes, it is suitable for automotive applications due to its robust design.
What are the typical applications for SIHG73N60AE-GE3?
- Typical applications include motor drives, inverters, and industrial equipment.