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SIHG35N60E-GE3
Product Overview
Category: Power Semiconductor
Use: High-power switching applications
Characteristics: High voltage, high current capability
Package: TO-247AC
Essence: Efficient power conversion
Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage Rating: 600V
- Current Rating: 35A
- RDS(ON): 0.15Ω
- Gate Charge: 110nC
- Diode Forward Voltage: 1.5V
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The SIHG35N60E-GE3 features a standard TO-247AC pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low RDS(ON) for reduced conduction losses
- Fast switching speed for improved efficiency
- High di/dt and dv/dt capabilities for high-frequency applications
Advantages
- High voltage and current ratings
- Low on-state resistance
- Fast switching speed
Disadvantages
- Higher gate charge compared to some alternative models
- Limited operating temperature range
Working Principles
The SIHG35N60E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
Detailed Application Field Plans
This product is suitable for various high-power switching applications, including: - Motor drives - Power supplies - Inverters - Welding equipment
Detailed and Complete Alternative Models
- SIHG35N60E-E3: Similar specifications, different packaging
- IRF840: Lower voltage rating, lower cost
- IXFK44N50Q: Higher voltage rating, higher cost
This entry provides a comprehensive overview of the SIHG35N60E-GE3, covering its category, use, characteristics, package, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Énumérez 10 questions et réponses courantes liées à l'application de SIHG35N60E-GE3 dans les solutions techniques
What is SIHG35N60E-GE3?
- SIHG35N60E-GE3 is a 600V, 35A IGBT (Insulated Gate Bipolar Transistor) designed for high power switching applications.
What are the typical applications of SIHG35N60E-GE3?
- SIHG35N60E-GE3 is commonly used in motor control, solar inverters, welding equipment, and other high power switching applications.
What are the key features of SIHG35N60E-GE3?
- The key features include low VCE(sat), fast switching speed, high ruggedness, and a wide safe operating area.
What is the maximum voltage and current rating of SIHG35N60E-GE3?
- SIHG35N60E-GE3 has a maximum voltage rating of 600V and a maximum current rating of 35A.
What are the thermal characteristics of SIHG35N60E-GE3?
- The device has low thermal resistance and is designed for efficient heat dissipation in high power applications.
Is SIHG35N60E-GE3 suitable for high frequency switching?
- Yes, SIHG35N60E-GE3 is designed for high frequency switching applications.
Does SIHG35N60E-GE3 require external protection circuitry?
- It is recommended to use external protection circuitry to ensure safe operation and reliability in the application.
What are the recommended mounting and soldering techniques for SIHG35N60E-GE3?
- The device should be mounted on a suitable heatsink using recommended thermal interface material, and proper soldering techniques should be followed as per the datasheet guidelines.
Can SIHG35N60E-GE3 be paralleled for higher current applications?
- Yes, the device can be paralleled to achieve higher current handling capability in certain applications.
Where can I find detailed technical specifications and application notes for SIHG35N60E-GE3?
- Detailed technical specifications and application notes can be found in the official datasheet provided by the manufacturer.