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SIHG16N50C-E3
Product Overview
Category
The SIHG16N50C-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHG16N50C-E3 is typically available in a TO-220AB package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 16A
- On-Resistance (RDS(on)): 0.52Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 28nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHG16N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid control in switching applications.
Advantages
- Suitable for high-voltage applications
- Low conduction losses
- Fast switching speed
Disadvantages
- Higher gate capacitance compared to some alternative models
- May require careful consideration of drive circuitry due to high gate-source voltage
Working Principles
The SIHG16N50C-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
- Power supply units
- Motor control systems
- Inverters and converters
- Switching power supplies
Detailed and Complete Alternative Models
Some alternative models to the SIHG16N50C-E3 include: - IRF840 - STP16NF06L - FQP16N25
In conclusion, the SIHG16N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications. While it has advantages such as low conduction losses and suitability for high-voltage applications, it also has considerations such as higher gate capacitance and drive circuitry requirements. Understanding its specifications, pin configuration, functional features, and alternative models provides a comprehensive view of its capabilities and potential applications.
Énumérez 10 questions et réponses courantes liées à l'application de SIHG16N50C-E3 dans les solutions techniques
What is the maximum voltage rating of SIHG16N50C-E3?
- The maximum voltage rating of SIHG16N50C-E3 is 500V.
What is the maximum continuous drain current of SIHG16N50C-E3?
- The maximum continuous drain current of SIHG16N50C-E3 is 16A.
What type of package does SIHG16N50C-E3 come in?
- SIHG16N50C-E3 comes in a TO-220AB package.
What is the typical on-resistance of SIHG16N50C-E3?
- The typical on-resistance of SIHG16N50C-E3 is 0.38 ohms.
What are the typical applications for SIHG16N50C-E3?
- SIHG16N50C-E3 is commonly used in power supplies, motor control, and lighting applications.
Does SIHG16N50C-E3 have built-in protection features?
- SIHG16N50C-E3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of SIHG16N50C-E3?
- The operating temperature range of SIHG16N50C-E3 is typically -55°C to 150°C.
Is SIHG16N50C-E3 RoHS compliant?
- Yes, SIHG16N50C-E3 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
Can SIHG16N50C-E3 be used in high-frequency switching applications?
- Yes, SIHG16N50C-E3 can be used in high-frequency switching applications due to its fast switching characteristics.
What are the recommended gate driver specifications for SIHG16N50C-E3?
- It is recommended to use a gate driver capable of providing sufficient gate voltage and current to ensure proper turn-on and turn-off of SIHG16N50C-E3.