Vishay Siliconix
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SIHB16N50C-E3
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SIHB16N50C-E3

Product Overview

Category

The SIHB16N50C-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHB16N50C-E3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 16A
  • On-Resistance (RDS(on)): 0.45Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 30nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB16N50C-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability from certain suppliers

Working Principles

The SIHB16N50C-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SIHB16N50C-E3 is well-suited for use in the following applications: - Power supplies - Motor control systems - High-power switching circuits

Detailed and Complete Alternative Models

Some alternative models to the SIHB16N50C-E3 include: - IRFB16N50K - STW16N50K3 - FDP16N50NZ

In conclusion, the SIHB16N50C-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.

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Énumérez 10 questions et réponses courantes liées à l'application de SIHB16N50C-E3 dans les solutions techniques

  1. What is the maximum voltage rating of SIHB16N50C-E3?

    • The maximum voltage rating of SIHB16N50C-E3 is 500V.

  2. What is the maximum current rating of SIHB16N50C-E3?

    • The maximum current rating of SIHB16N50C-E3 is 16A.

  3. What type of package does SIHB16N50C-E3 come in?

    • SIHB16N50C-E3 comes in a TO-220AB package.

  4. What are the typical applications for SIHB16N50C-E3?

    • SIHB16N50C-E3 is commonly used in power supplies, motor control, and lighting applications.

  5. Does SIHB16N50C-E3 have built-in protection features?

    • Yes, SIHB16N50C-E3 has built-in overcurrent and overtemperature protection.

  6. What is the on-state resistance of SIHB16N50C-E3?

    • The on-state resistance of SIHB16N50C-E3 is typically around 0.35 ohms.

  7. Is SIHB16N50C-E3 suitable for high-frequency switching applications?

    • Yes, SIHB16N50C-E3 is suitable for high-frequency switching due to its fast switching characteristics.

  8. What is the gate threshold voltage of SIHB16N50C-E3?

    • The gate threshold voltage of SIHB16N50C-E3 is typically around 4V.

  9. Can SIHB16N50C-E3 be used in automotive applications?

    • Yes, SIHB16N50C-E3 is suitable for automotive applications, such as in electric vehicle systems.

  10. Are there any recommended heat sink solutions for SIHB16N50C-E3?

    • Yes, it is recommended to use a suitable heat sink to manage the thermal performance of SIHB16N50C-E3 in high-power applications.