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SIHB12N60E-GE3
Product Category
The SIHB12N60E-GE3 belongs to the category of power MOSFETs.
Basic Information Overview
- Use: The SIHB12N60E-GE3 is used as a power semiconductor device for high-frequency switching and amplification in various electronic circuits.
- Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications.
- Package: The SIHB12N60E-GE3 is typically available in a TO-220AB package.
- Essence: Its essence lies in providing efficient power management and control in electronic systems.
- Packaging/Quantity: It is commonly packaged in reels containing a specific quantity based on manufacturer specifications.
Specifications
- Voltage Rating: 600V
- Current Rating: 12A
- RDS(ON): 0.35Ω
- Gate Charge: 20nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHB12N60E-GE3 features a standard pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High Voltage Capability
- Low On-State Resistance
- Fast Switching Speed
- Low Gate Charge
Advantages
- Enhanced Power Efficiency
- Reduced Heat Dissipation
- Improved System Reliability
- Compact Design Integration
Disadvantages
- Sensitivity to Overvoltage Conditions
- Potential for Gate-Drive Complexity
Working Principles
The SIHB12N60E-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SIHB12N60E-GE3 finds extensive application in: - Switched-Mode Power Supplies - Motor Control Systems - Inverters and Converters - Lighting Ballasts - Audio Amplifiers
Detailed and Complete Alternative Models
- SIHB12N60E
- Similar specifications and characteristics
- IRFB7434PbF
- Comparable performance in power electronics applications
- STW12NK60Z
- Alternative option with equivalent power handling capabilities
This comprehensive range of alternative models ensures flexibility in design and procurement decisions.
This content provides a detailed overview of the SIHB12N60E-GE3, covering its category, basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Énumérez 10 questions et réponses courantes liées à l'application de SIHB12N60E-GE3 dans les solutions techniques
What is the maximum voltage rating of SIHB12N60E-GE3?
- The maximum voltage rating of SIHB12N60E-GE3 is 600V.
What is the maximum continuous drain current of SIHB12N60E-GE3?
- The maximum continuous drain current of SIHB12N60E-GE3 is 12A.
What is the on-state resistance of SIHB12N60E-GE3?
- The on-state resistance of SIHB12N60E-GE3 is typically 0.45 ohms.
What type of package does SIHB12N60E-GE3 come in?
- SIHB12N60E-GE3 comes in a TO-220 full-pack package.
What are the typical applications for SIHB12N60E-GE3?
- SIHB12N60E-GE3 is commonly used in power supplies, motor drives, and lighting applications.
What is the operating temperature range of SIHB12N60E-GE3?
- The operating temperature range of SIHB12N60E-GE3 is -55°C to 150°C.
Does SIHB12N60E-GE3 have built-in protection features?
- Yes, SIHB12N60E-GE3 has built-in overcurrent and thermal protection.
Can SIHB12N60E-GE3 be used in high-frequency switching applications?
- Yes, SIHB12N60E-GE3 is suitable for high-frequency switching due to its low gate charge and intrinsic diode.
What is the gate threshold voltage of SIHB12N60E-GE3?
- The gate threshold voltage of SIHB12N60E-GE3 is typically 4V.
Is SIHB12N60E-GE3 RoHS compliant?
- Yes, SIHB12N60E-GE3 is RoHS compliant, making it suitable for environmentally friendly designs.