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SI4953ADY-T1-GE3
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SI4953ADY-T1-GE3

Product Overview

Category: Integrated Circuit
Use: Power MOSFET
Characteristics: Low on-resistance, high-speed switching
Package: DFN (Dual Flat No-Lead)
Essence: Power management
Packaging/Quantity: Tape & Reel, 3000 units

Specifications

  • Voltage - Drain-Source Breakdown (Max): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) @ Vds: 2100pF @ 15V

Detailed Pin Configuration

  1. Pin 1: Gate
  2. Pin 2: Source
  3. Pin 3: Drain

Functional Features

  • Low on-resistance for efficient power management
  • High-speed switching for improved performance
  • Enhanced thermal characteristics for reliability

Advantages and Disadvantages

Advantages: - Efficient power management - High-performance switching - Reliable thermal characteristics

Disadvantages: - Sensitive to overvoltage conditions - Limited voltage breakdown capability

Working Principles

The SI4953ADY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high-speed switching capabilities to effectively manage power flow within electronic circuits.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Power supplies - Motor control - Load switches

Detailed and Complete Alternative Models

  1. SI4953BDY-T1-GE3
    • Similar specifications and package
    • Suitable alternative for power management applications
  2. SI4953CDY-T1-GE3
    • Higher voltage breakdown capability
    • Alternative for applications requiring higher voltage handling

This completes the entry for SI4953ADY-T1-GE3 in the English editing encyclopedia format.

Énumérez 10 questions et réponses courantes liées à l'application de SI4953ADY-T1-GE3 dans les solutions techniques

  1. What is the maximum drain-source voltage of SI4953ADY-T1-GE3?

    • The maximum drain-source voltage of SI4953ADY-T1-GE3 is 20V.

  2. What is the continuous drain current of SI4953ADY-T1-GE3?

    • The continuous drain current of SI4953ADY-T1-GE3 is 4.7A.

  3. What is the on-resistance of SI4953ADY-T1-GE3?

    • The on-resistance of SI4953ADY-T1-GE3 is typically 25mΩ at Vgs=10V.

  4. What is the gate threshold voltage of SI4953ADY-T1-GE3?

    • The gate threshold voltage of SI4953ADY-T1-GE3 is typically 1.5V.

  5. What is the power dissipation of SI4953ADY-T1-GE3?

    • The power dissipation of SI4953ADY-T1-GE3 is 1.25W.

  6. What are the package dimensions of SI4953ADY-T1-GE3?

    • The package dimensions of SI4953ADY-T1-GE3 are 3.3mm x 3.3mm.

  7. What is the operating temperature range of SI4953ADY-T1-GE3?

    • The operating temperature range of SI4953ADY-T1-GE3 is -55°C to 150°C.

  8. Is SI4953ADY-T1-GE3 RoHS compliant?

    • Yes, SI4953ADY-T1-GE3 is RoHS compliant.

  9. What are the typical applications for SI4953ADY-T1-GE3?

    • SI4953ADY-T1-GE3 is commonly used in load switching, power management, and battery protection applications.

  10. Does SI4953ADY-T1-GE3 have built-in ESD protection?

    • Yes, SI4953ADY-T1-GE3 has built-in ESD protection up to 2kV (HBM).