SI4932DY-T1-GE3

Product Overview

Category: Integrated Circuit
Use: Power Management
Characteristics: High efficiency, low power consumption
Package: SOIC-8
Essence: MOSFET
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) @ Vds: 2200pF @ 15V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

1. Gate
2. Source
3. Drain
4. N/C
5. N/C
6. Drain
7. Source
8. Gate

Functional Features

• Low Rds(on) for high efficiency
• Fast switching speed
• Low gate charge for reduced power loss

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Fast switching speed

Disadvantages: - Sensitive to static electricity - Limited voltage range

Working Principles

The SI4932DY-T1-GE3 is a MOSFET designed for power management applications. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

This MOSFET is suitable for various power management applications such as DC-DC converters, motor control, and load switching in portable devices, automotive systems, and industrial equipment.

Detailed and Complete Alternative Models

1. SI4946DY-T1-GE3
2. SI4958DY-T1-GE3
3. SI4962DY-T1-GE3

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This content provides a comprehensive overview of the SI4932DY-T1-GE3, covering its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.