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SI4890BDY-T1-E3
Product Overview
Category
The SI4890BDY-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power management applications such as voltage regulation and power switching.
Characteristics
- High power handling capability
- Low on-resistance
- Fast switching speed
- Low gate drive requirements
Package
The SI4890BDY-T1-E3 is typically available in a small outline package (SOP) or a dual flat no-leads (DFN) package.
Essence
This MOSFET is designed to efficiently control and manage power flow in various electronic circuits.
Packaging/Quantity
It is usually supplied in reels containing a specific quantity, such as 3000 units per reel.
Specifications
- Drain-Source Voltage: 30V
- Continuous Drain Current: 9.5A
- On-Resistance: 18mΩ
- Power Dissipation: 2.5W
- Gate-Source Voltage (Max): ±20V
Detailed Pin Configuration
The SI4890BDY-T1-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient power management
- High current handling capability for robust performance
Advantages
- Efficient power management
- Reduced power dissipation
- Suitable for high-frequency applications
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The SI4890BDY-T1-E3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in various applications including: - Switching power supplies - DC-DC converters - Motor control circuits - Battery management systems
Detailed and Complete Alternative Models
Some alternative models to the SI4890BDY-T1-E3 include: - SI4891BDY-T1-E3 - SI4892BDY-T1-E3 - SI4893BDY-T1-E3
In conclusion, the SI4890BDY-T1-E3 power MOSFET offers efficient power management and is suitable for a wide range of applications in the electronics industry.
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Énumérez 10 questions et réponses courantes liées à l'application de SI4890BDY-T1-E3 dans les solutions techniques
What is the maximum voltage rating of SI4890BDY-T1-E3?
- The maximum voltage rating of SI4890BDY-T1-E3 is typically 30V.
What is the typical on-resistance of SI4890BDY-T1-E3?
- The typical on-resistance of SI4890BDY-T1-E3 is around 8 mΩ.
What is the maximum continuous drain current for SI4890BDY-T1-E3?
- The maximum continuous drain current for SI4890BDY-T1-E3 is typically 120A.
What are the recommended operating temperature range for SI4890BDY-T1-E3?
- The recommended operating temperature range for SI4890BDY-T1-E3 is -55°C to 150°C.
Does SI4890BDY-T1-E3 have built-in ESD protection?
- Yes, SI4890BDY-T1-E3 is designed with built-in ESD protection.
What type of package does SI4890BDY-T1-E3 come in?
- SI4890BDY-T1-E3 is available in a PowerPAK® SO-8 package.
Is SI4890BDY-T1-E3 suitable for automotive applications?
- Yes, SI4890BDY-T1-E3 is AEC-Q101 qualified and suitable for automotive applications.
What is the gate threshold voltage of SI4890BDY-T1-E3?
- The gate threshold voltage of SI4890BDY-T1-E3 is typically 1V.
Can SI4890BDY-T1-E3 be used in high-frequency switching applications?
- Yes, SI4890BDY-T1-E3 is suitable for high-frequency switching applications.
Does SI4890BDY-T1-E3 require an external gate driver?
- No, SI4890BDY-T1-E3 has a low input capacitance and can be driven directly by many microcontrollers or FPGAs without the need for an external gate driver.