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SI4100DY-T1-GE3

SI4100DY-T1-GE3

Product Overview

Category

The SI4100DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive requirements

Package

The SI4100DY-T1-GE3 is typically available in a compact and efficient PowerPAK SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 4.3A
  • On-Resistance (RDS(on)): 40mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 9.5nC
  • Threshold Voltage (VGS(th)): 2.5V

Detailed Pin Configuration

The SI4100DY-T1-GE3 features a standard PowerPAK SO-8 pin configuration: 1. Source 2. Gate 3. Gate 4. N/C 5. N/C 6. Drain 7. Drain 8. Source

Functional Features

  • Efficient power switching
  • Low power dissipation
  • Enhanced thermal performance
  • Reliable overcurrent protection

Advantages

  • High efficiency
  • Compact package size
  • Suitable for high-frequency applications
  • Low conduction losses

Disadvantages

  • Sensitive to static electricity
  • Limited maximum voltage rating

Working Principles

The SI4100DY-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SI4100DY-T1-GE3 is widely used in: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems

Detailed and Complete Alternative Models

  • SI4112-D-GM: Similar specifications with enhanced thermal performance
  • SI4133-D-GM: Higher voltage rating with comparable on-resistance
  • SI4178-D-GM: Lower on-resistance for higher current handling

In conclusion, the SI4100DY-T1-GE3 power MOSFET offers efficient power management solutions with its compact package and high-performance characteristics, making it an ideal choice for various electronic applications.

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Énumérez 10 questions et réponses courantes liées à l'application de SI4100DY-T1-GE3 dans les solutions techniques

  1. What is the maximum operating temperature of SI4100DY-T1-GE3?

    • The maximum operating temperature of SI4100DY-T1-GE3 is typically 150°C.
  2. What is the input voltage range for SI4100DY-T1-GE3?

    • The input voltage range for SI4100DY-T1-GE3 is typically 4.5V to 60V.
  3. What is the typical output current capability of SI4100DY-T1-GE3?

    • The typical output current capability of SI4100DY-T1-GE3 is 1A.
  4. Does SI4100DY-T1-GE3 have built-in overcurrent protection?

    • Yes, SI4100DY-T1-GE3 features built-in overcurrent protection.
  5. What is the typical efficiency of SI4100DY-T1-GE3?

    • The typical efficiency of SI4100DY-T1-GE3 is around 90%.
  6. Is SI4100DY-T1-GE3 suitable for automotive applications?

    • Yes, SI4100DY-T1-GE3 is suitable for automotive applications.
  7. Does SI4100DY-T1-GE3 require an external heat sink for thermal management?

    • No, SI4100DY-T1-GE3 does not require an external heat sink for typical applications.
  8. What is the typical switching frequency of SI4100DY-T1-GE3?

    • The typical switching frequency of SI4100DY-T1-GE3 is around 500kHz.
  9. Can SI4100DY-T1-GE3 be used in industrial control systems?

    • Yes, SI4100DY-T1-GE3 can be used in industrial control systems.
  10. Does SI4100DY-T1-GE3 have a shutdown mode for power saving?

    • Yes, SI4100DY-T1-GE3 features a shutdown mode for power saving.