SI1965DH-T1-GE3

Product Category: Semiconductor

Basic Information Overview: - Category: Power MOSFET - Use: Power switching applications - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: D2PAK-7 - Essence: High-performance power MOSFET for various power applications - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 120A - RDS(ON): 1.6mΩ - Gate Charge (Qg): 60nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: N/C - Pin 5: Source - Pin 6: Drain - Pin 7: Gate

Functional Features: - Low on-resistance for high efficiency - Fast switching speed for improved performance - Enhanced thermal performance for reliability

Advantages: - High efficiency - Low on-resistance - Reliable thermal performance

Disadvantages: - Sensitive to static electricity - Requires careful handling during installation

Working Principles: The SI1965DH-T1-GE3 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in power switching applications.

Detailed Application Field Plans: - Power supplies - Motor control - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DH-T1-GE3 - SI2391DS-T1-GE3

This comprehensive entry provides a detailed overview of the SI1965DH-T1-GE3 power MOSFET, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.