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SI1034X-T1-E3
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SI1034X-T1-E3

Product Overview

  • Belongs to: Semiconductor devices
  • Category: Power MOSFET
  • Use: Power management applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN (Dual Flat No-Lead)
  • Essence: Efficient power control
  • Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

  • Voltage Rating: 30V
  • Current Rating: 10A
  • On-Resistance: 6.5mΩ
  • Gate Charge: 8.2nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain
  • Pin 4: Not connected

Functional Features

  • Fast switching for high-frequency applications
  • Low on-resistance for reduced power dissipation
  • Enhanced thermal performance for improved reliability

Advantages and Disadvantages

  • Advantages:
    • High efficiency
    • Compact package
    • Wide operating temperature range
  • Disadvantages:
    • Limited voltage and current ratings
    • Sensitive to static discharge

Working Principles

The SI1034X-T1-E3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the source and drain terminals.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power management applications, including but not limited to: - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

  • SI1035X-T1-E3: Higher voltage rating
  • SI1033X-T1-E3: Lower on-resistance
  • SI1034Y-T1-E3: Different package type

Note: The above information is subject to change based on product updates and revisions.

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Énumérez 10 questions et réponses courantes liées à l'application de SI1034X-T1-E3 dans les solutions techniques

  1. What is the SI1034X-T1-E3?

    • The SI1034X-T1-E3 is a high-speed, low-capacitance silicon PIN diode designed for use in RF and microwave applications.

  2. What are the key features of the SI1034X-T1-E3?

    • The key features include low capacitance, high switching speed, and low forward voltage.

  3. What are the typical applications of the SI1034X-T1-E3?

    • Typical applications include RF switches, attenuators, phase shifters, and high-speed data communication systems.

  4. What is the maximum forward voltage of the SI1034X-T1-E3?

    • The maximum forward voltage is typically around 1V at a forward current of 10mA.

  5. What is the reverse recovery time of the SI1034X-T1-E3?

    • The reverse recovery time is typically in the range of a few nanoseconds.

  6. What is the maximum power dissipation of the SI1034X-T1-E3?

    • The maximum power dissipation is typically around 150mW.

  7. What is the operating temperature range of the SI1034X-T1-E3?

    • The operating temperature range is typically from -55°C to 150°C.

  8. What is the package type of the SI1034X-T1-E3?

    • The SI1034X-T1-E3 is available in a SOD-323 package.

  9. What are the recommended storage conditions for the SI1034X-T1-E3?

    • It is recommended to store the SI1034X-T1-E3 in a dry environment at temperatures between -55°C and 150°C.

  10. Where can I find the detailed datasheet for the SI1034X-T1-E3?

    • The detailed datasheet for the SI1034X-T1-E3 can be found on the manufacturer's website or through authorized distributors.