IRFIBC40GLCPBF
Product Category: Power MOSFET
Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electronic signals in power applications - Characteristics: High voltage and current handling capability, low on-state resistance, fast switching speed - Package: TO-220AB - Essence: Power management and control - Packaging/Quantity: Bulk packaging, typically 50 pieces per tube
Specifications: - Voltage Rating: 600V - Current Rating: 24A - On-State Resistance (RDS(on)): 0.16 Ohms - Gate Threshold Voltage (VGS(th)): 2 - 4V - Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
Functional Features: - High voltage capability suitable for power applications - Low on-state resistance minimizes power dissipation - Fast switching speed enables efficient power management
Advantages: - Excellent high-voltage performance - Low conduction losses - Suitable for high-frequency applications
Disadvantages: - Sensitivity to overvoltage conditions - Requires careful handling to prevent electrostatic damage
Working Principles: The IRFIBC40GLCPBF operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Switched-mode power supplies - Motor control circuits - Inverters and converters - Audio amplifiers
Detailed and Complete Alternative Models: - Infineon IPP60R190C6 - STMicroelectronics STP80NF70
This MOSFET is widely used in various power electronics applications due to its high voltage and current capabilities, making it suitable for demanding power management tasks.
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What is IRFIBC40GLCPBF?
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