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IRFBG20
Product Overview
Belongs to: Power MOSFET
Category: Electronic Component
Use: Switching and Amplification
Characteristics: High power handling, low on-resistance, fast switching speed
Package: TO-220AB
Essence: Power management
Packaging/Quantity: Bulk packaging, 50 pieces per pack
Specifications
- Drain-Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 68A
- On-Resistance (Rds(on)): 8.5mΩ
- Gate-Source Voltage (Vgs): ±20V
- Power Dissipation (Pd): 300W
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low gate charge
- Fast switching speed
- High input impedance
- Avalanche ruggedness
Advantages and Disadvantages
Advantages: - High power handling capability - Low on-resistance for reduced conduction losses - Suitable for high-frequency applications
Disadvantages: - Sensitivity to over-voltage conditions - Higher cost compared to standard MOSFETs
Working Principles
The IRFBG20 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient gate-source voltage is applied, the MOSFET enters the "on" state, allowing current to flow through it.
Detailed Application Field Plans
The IRFBG20 is commonly used in various power electronics applications, including: - Switch-mode power supplies - Motor control systems - Class-D audio amplifiers - DC-DC converters - Solar inverters
Detailed and Complete Alternative Models
- IRFBG30: Similar specifications with higher voltage rating
- IRFBG10: Lower on-resistance with slightly lower current handling capacity
- IRFBG40: Higher power dissipation capability with similar voltage and current ratings
In conclusion, the IRFBG20 Power MOSFET offers high power handling, fast switching speed, and low on-resistance, making it suitable for a wide range of power management applications.
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Énumérez 10 questions et réponses courantes liées à l'application de IRFBG20 dans les solutions techniques
What is the IRFBG20?
- The IRFBG20 is a power MOSFET transistor designed for various technical applications, including power supplies, motor control, and lighting.
What is the maximum voltage and current rating of the IRFBG20?
- The IRFBG20 has a maximum voltage rating of 100V and a continuous drain current rating of 68A.
What are the typical applications of the IRFBG20?
- Typical applications of the IRFBG20 include switch mode power supplies, motor drives, and general purpose inverters.
What is the on-state resistance (RDS(on)) of the IRFBG20?
- The on-state resistance of the IRFBG20 is typically around 8.5 milliohms.
What is the gate-source voltage (VGS) required to fully turn on the IRFBG20?
- The IRFBG20 typically requires a gate-source voltage of 10V to ensure full conduction.
Does the IRFBG20 require a heatsink for operation?
- Yes, due to its high current and power handling capabilities, the IRFBG20 typically requires a heatsink for efficient heat dissipation.
Can the IRFBG20 be used in automotive applications?
- Yes, the IRFBG20 is suitable for automotive applications, provided it meets the specific requirements and standards for automotive electronics.
What are the thermal characteristics of the IRFBG20?
- The IRFBG20 has a low thermal resistance and is designed to efficiently dissipate heat when properly mounted on a heatsink.
Is the IRFBG20 suitable for high-frequency switching applications?
- Yes, the IRFBG20 is capable of operating in high-frequency switching applications, making it suitable for various power conversion circuits.
Are there any recommended driver ICs for controlling the IRFBG20?
- Various manufacturers offer compatible driver ICs specifically designed for driving MOSFETs like the IRFBG20, ensuring optimal performance and reliability in technical solutions.