IRF830STRLPBF

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplification in power electronics applications - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-220AB - Essence: Efficient power control and management - Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications: - Voltage Rating: 500V - Current Rating: 4.5A - On-Resistance: 1.2Ω - Power Dissipation: 75W

Detailed Pin Configuration: The IRF830STRLPBF has a standard TO-220AB package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features: - High input impedance - Low gate drive power required - Fast switching speed - Low output capacitance

Advantages: - Low on-resistance for reduced power losses - Suitable for high voltage applications - Robust and reliable performance

Disadvantages: - Relatively high gate threshold voltage - Sensitivity to electrostatic discharge (ESD)

Working Principles: The IRF830STRLPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans: 1. Switching Power Supplies: Used in DC-DC converters and inverters for efficient power conversion. 2. Motor Control: Employed in motor drive circuits for variable speed control. 3. Electronic Ballasts: Utilized in fluorescent and LED lighting systems for efficient power regulation.

Detailed and Complete Alternative Models: 1. IRF840 2. IRF740 3. IRF3205 4. IRF9540

This concludes the entry for the IRF830STRLPBF power MOSFET, covering its product category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.