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2N6660JTX02
Product Category: Transistor
Basic Information Overview: - Category: Power MOSFET - Use: Amplification and switching in electronic circuits - Characteristics: High voltage, high current capability, low on-resistance - Package: TO-220AB - Essence: N-channel enhancement mode power MOSFET - Packaging/Quantity: Typically packaged in tubes or reels, quantity varies by manufacturer
Specifications: - Drain-Source Voltage (VDS): 200V - Continuous Drain Current (ID): 18A - On-Resistance (RDS(on)): 0.08Ω - Gate-Source Voltage (VGS): ±20V - Power Dissipation (PD): 75W
Detailed Pin Configuration: The 2N6660JTX02 features a standard TO-220AB pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features: - High voltage capability - Low on-resistance - Fast switching speed - Low input capacitance
Advantages: - Suitable for high-power applications - Efficient switching performance - Low conduction losses
Disadvantages: - Higher cost compared to some alternative models - May require heat sinking in high-power applications
Working Principles: The 2N6660JTX02 operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans: - Power supplies - Motor control - Audio amplifiers - LED lighting - Switching regulators
Detailed and Complete Alternative Models: - IRF540N - FQP30N06L - STP55NF06L - IRLB8743
This comprehensive entry provides an in-depth understanding of the 2N6660JTX02 power MOSFET, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Énumérez 10 questions et réponses courantes liées à l'application de 2N6660JTX02 dans les solutions techniques
What is the 2N6660JTX02 transistor used for?
- The 2N6660JTX02 is a high-voltage, high-speed N-channel power MOSFET designed for applications such as switching power supplies, motor control, and other high-voltage, high-speed switching applications.
What are the key specifications of the 2N6660JTX02?
- The 2N6660JTX02 has a maximum drain-source voltage of 600V, a continuous drain current of 5A, and a low on-resistance for efficient power handling.
Can the 2N6660JTX02 be used in automotive applications?
- Yes, the 2N6660JTX02 is suitable for automotive applications due to its high-voltage and high-speed capabilities, making it suitable for use in automotive power systems and motor control.
What are the typical thermal characteristics of the 2N6660JTX02?
- The 2N6660JTX02 has a low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
Is the 2N6660JTX02 suitable for use in switching power supply designs?
- Yes, the 2N6660JTX02 is commonly used in switching power supply designs due to its high-voltage capability and fast switching speed.
What are the recommended operating conditions for the 2N6660JTX02?
- The 2N6660JTX02 is typically operated within a temperature range of -55°C to 150°C and with a maximum gate-source voltage of ±20V.
Can the 2N6660JTX02 be used in audio amplifier circuits?
- While the 2N6660JTX02 is primarily designed for power switching applications, it can also be used in certain audio amplifier designs where high-voltage and high-speed switching are required.
Does the 2N6660JTX02 require a heatsink for operation?
- Depending on the specific application and power dissipation requirements, a heatsink may be necessary for optimal thermal management when using the 2N6660JTX02 in high-power applications.
Are there any common failure modes associated with the 2N6660JTX02?
- Common failure modes include overvoltage or overcurrent conditions leading to device breakdown, as well as excessive junction temperatures if not properly managed.
What are some alternative components to the 2N6660JTX02 for similar applications?
- Alternative components for similar applications include the IRF840, IRF540, and IRF3205, which are also high-voltage, high-speed N-channel power MOSFETs suitable for power switching applications.