Vishay Siliconix
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2N5114-E3

2N5114-E3

Product Overview

  • Category: Electronic Component
  • Use: Amplification and Switching
  • Characteristics: High voltage, high current capability
  • Package: TO-92
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Maximum Collector-Emitter Voltage: 50V
  • Maximum Collector Current: 200mA
  • Power Dissipation: 625mW
  • Transition Frequency: 100MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N5114-E3 transistor has three pins: 1. Emitter (E): Connected to the n-type material. 2. Base (B): Controls the flow of current between the collector and emitter. 3. Collector (C): Collects the majority charge carriers.

Functional Features

  • High voltage and current capability
  • Fast switching speed
  • Low noise
  • Reliable performance in various applications

Advantages and Disadvantages

Advantages: - High power dissipation capability - Wide operating temperature range - Versatile use in amplification and switching circuits

Disadvantages: - Sensitive to overvoltage conditions - Limited frequency response compared to some alternative models

Working Principles

The 2N5114-E3 operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the base-emitter junction. When a small current is applied to the base, it controls a larger current flowing from the collector to the emitter, allowing for amplification or switching functions.

Detailed Application Field Plans

  • Audio amplification circuits
  • Switching circuits in electronic devices
  • Signal amplification in communication systems
  • Power supply regulation circuits

Detailed and Complete Alternative Models

  1. 2N3904: Similar NPN transistor with lower power dissipation but wider frequency response.
  2. BC547: General-purpose NPN transistor with comparable characteristics.
  3. 2N2222: NPN transistor with higher current capability and faster switching speed.

This comprehensive entry provides an in-depth understanding of the 2N5114-E3 transistor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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Énumérez 10 questions et réponses courantes liées à l'application de 2N5114-E3 dans les solutions techniques

  1. What is the 2N5114-E3?

    • The 2N5114-E3 is a high-frequency, N-channel JFET (junction field-effect transistor) commonly used in RF (radio frequency) applications.

  2. What are the key features of the 2N5114-E3?

    • The 2N5114-E3 features low noise, high gain, and excellent high-frequency performance, making it suitable for amplification and signal processing in RF circuits.

  3. What are the typical applications of the 2N5114-E3?

    • Typical applications include RF amplifiers, mixers, oscillators, and other high-frequency signal processing circuits.

  4. What is the maximum operating frequency of the 2N5114-E3?

    • The 2N5114-E3 can operate at frequencies up to several gigahertz, depending on the specific circuit design and application.

  5. What are the recommended operating conditions for the 2N5114-E3?

    • The 2N5114-E3 operates best within specified voltage, current, and temperature ranges, which should be carefully considered in the circuit design.

  6. How does the 2N5114-E3 compare to similar JFETs in terms of performance?

    • The 2N5114-E3 offers competitive performance in terms of noise figure, gain, and frequency response compared to other JFETs in its class.

  7. Are there any known limitations or considerations when using the 2N5114-E3?

    • It's important to consider input impedance matching, biasing, and potential stability issues when integrating the 2N5114-E3 into a circuit.

  8. Can the 2N5114-E3 be used in low-power applications?

    • While the 2N5114-E3 is optimized for high-frequency and moderate-to-high power applications, it can also be used in lower power circuits with appropriate design considerations.

  9. What are the recommended soldering and handling practices for the 2N5114-E3?

    • Proper ESD (electrostatic discharge) precautions and careful soldering techniques should be followed to avoid damaging the sensitive components of the 2N5114-E3.

  10. Where can I find detailed datasheets and application notes for the 2N5114-E3?

    • Datasheets and application notes for the 2N5114-E3 can be obtained from the manufacturer's website or authorized distributors, providing comprehensive information for designing with this component.