Vishay Semiconductor Diodes Division
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
BU25H06-M3/P
Voir les détails DataSheets

BU25H06-M3/P

Product Overview

Category

The BU25H06-M3/P belongs to the category of semiconductor devices, specifically a power MOSFET.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive power
  • Avalanche ruggedness

Package

The BU25H06-M3/P is typically available in a TO-263 package.

Essence

This product is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Voltage Rating: 60V
  • Current Rating: 25A
  • On-Resistance: 0.025 ohms
  • Gate Threshold Voltage: 2-4V
  • Total Gate Charge: 30nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The BU25H06-M3/P typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

  • High voltage capability allows it to be used in a wide range of applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of the connected load.

Advantages

  • Suitable for high-power applications
  • Low power dissipation
  • Reliable and robust

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The BU25H06-M3/P operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Switching power supplies - Motor control - LED lighting - Battery management systems - Inverters

Detailed and Complete Alternative Models

Some alternative models to BU25H06-M3/P include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the BU25H06-M3/P power MOSFET offers high performance and reliability, making it a popular choice for various electronic applications requiring efficient power control.

[Word Count: 311]

Énumérez 10 questions et réponses courantes liées à l'application de BU25H06-M3/P dans les solutions techniques

  1. What is BU25H06-M3/P?

    • BU25H06-M3/P is a high-power, high-frequency silicon NPN transistor designed for use in RF and microwave applications.

  2. What are the key specifications of BU25H06-M3/P?

    • The key specifications include a maximum power dissipation of 25W, a maximum collector current of 6A, and a frequency range of up to 1GHz.

  3. In what technical solutions can BU25H06-M3/P be used?

    • BU25H06-M3/P can be used in RF amplifiers, RF power transmitters, RF generators, and other high-power RF and microwave applications.

  4. What are the typical operating conditions for BU25H06-M3/P?

    • The typical operating voltage is around 28V, with a collector current of 3A and a frequency range of 500MHz to 1GHz.

  5. How does BU25H06-M3/P compare to similar transistors in its class?

    • BU25H06-M3/P offers higher power dissipation and current capabilities compared to many similar transistors, making it suitable for high-power applications.

  6. What are the thermal considerations when using BU25H06-M3/P?

    • Proper heat sinking and thermal management are crucial due to the high power dissipation of BU25H06-M3/P to ensure reliable operation.

  7. Are there any specific application notes or reference designs available for BU25H06-M3/P?

    • Yes, the manufacturer provides application notes and reference designs for using BU25H06-M3/P in various RF and microwave circuits.

  8. Can BU25H06-M3/P be used in linear amplifier designs?

    • Yes, BU25H06-M3/P can be used in linear amplifier designs, especially in applications requiring high power and wide bandwidth.

  9. What are the recommended biasing and matching techniques for BU25H06-M3/P?

    • Proper biasing and impedance matching techniques should be employed to maximize the performance and efficiency of BU25H06-M3/P in RF circuits.

  10. Where can I find detailed datasheets and application information for BU25H06-M3/P?

    • Detailed datasheets and application information for BU25H06-M3/P can be found on the manufacturer's website or through authorized distributors.