TC58BVG0S3HBAI4

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High-speed, low-power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory
• Packaging/Quantity: Tape and reel, 1000 units per reel

Specifications

• Memory Type: NAND Flash
• Density: 4 gigabits (Gb)
• Organization: 512 megabytes (MB) x 8 bits
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The TC58BVG0S3HBAI4 has a total of 16 pins arranged as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Serial data input
8. SIO3: Serial data output
9. CE# or CS#: Chip enable or chip select
10. CLE: Command latch enable
11. ALE: Address latch enable
12. RE# or RY/BY#: Read enable or ready/busy
13. WE#: Write enable
14. R/B#: Ready/busy or data output
15. NC: No connection
16. VCCQ: Power supply voltage for I/O pins

Functional Features

• High-speed data transfer with SPI interface
• Low power consumption for extended battery life
• Error correction code (ECC) for improved data reliability
• Block erase and page program operations for efficient memory management
• Write protection feature to prevent accidental data modification
• Ready/busy signal for easy status monitoring

Advantages and Disadvantages

Advantages

• Fast data transfer rate
• Low power consumption
• High endurance
• Compact package size
• Reliable data storage
• Easy integration with existing systems

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit of storage
• Susceptible to physical damage if mishandled

Working Principles

The TC58BVG0S3HBAI4 is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The memory cells are made up of floating-gate transistors that can retain their stored charge even when the power is turned off.

To read data from the memory, the controller sends commands and addresses through the SPI interface. The memory responds by providing the requested data. During programming or erasing operations, the controller sends specific commands and data to modify the contents of the memory cells.

Detailed Application Field Plans

The TC58BVG0S3HBAI4 is widely used in various electronic devices that require non-volatile memory storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, portable media players
2. Automotive: Infotainment systems, navigation systems, instrument clusters
3. Industrial: Internet of Things (IoT) devices, industrial automation, control systems
4. Networking: Routers, switches, network storage devices
5. Medical: Patient monitoring systems, medical imaging equipment

Detailed and Complete Alternative Models

1. TC58NVG0S3HBAI4: Similar specifications, but with higher storage density (8Gb)
2. TC58CVG0S3HBAI4: Similar specifications, but with lower power consumption
3. TC58BVH0S3HBAI4: Similar specifications, but with extended temperature range (-40°C to +105°C)

These alternative models provide options for different storage requirements, power constraints, and operating environments.

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