Voir les spécifications pour les détails du produit.
STGWA30N120KD
Product Overview
STGWA30N120KD belongs to the category of power semiconductor devices. It is commonly used in high-power applications such as motor drives, inverters, and power supplies. The device is known for its high efficiency, low switching losses, and robust packaging. It is typically packaged in a TO-247 package and is available in various quantities.
Specifications
- Voltage Rating: 1200V
- Current Rating: 30A
- Package Type: TO-247
- Quantity: Variable
Detailed Pin Configuration
The STGWA30N120KD features a standard TO-247 pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability
- Low on-state voltage
- Fast switching speed
- Robust and reliable operation
Advantages
- High efficiency
- Low switching losses
- Robust packaging
- Wide voltage and current ratings
Disadvantages
- Higher cost compared to standard diodes
- Requires careful handling due to high voltage capabilities
Working Principles
STGWA30N120KD operates based on the principles of field-effect transistors (FETs), utilizing the control of an electric field to modulate the conductivity of a channel. When a sufficient gate voltage is applied, the device allows current to flow between the drain and source terminals.
Detailed Application Field Plans
STGWA30N120KD finds extensive use in industrial motor drives, renewable energy systems, uninterruptible power supplies (UPS), and welding equipment. Its high power handling capabilities make it suitable for applications requiring efficient and reliable power switching.
Detailed and Complete Alternative Models
- STGW40NC60VD: 600V, 40A, TO-247 package
- STGWA25HP60D: 600V, 25A, TO-247 package
- STGWA15C120D: 1200V, 15A, TO-247 package
In conclusion, STGWA30N120KD is a high-performance power semiconductor device that offers efficient and reliable power switching for a wide range of high-power applications.
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Énumérez 10 questions et réponses courantes liées à l'application de STGWA30N120KD dans les solutions techniques
What is STGWA30N120KD?
- STGWA30N120KD is a silicon carbide power MOSFET designed for high-power applications.
What are the key features of STGWA30N120KD?
- The key features include a high voltage rating, low on-resistance, fast switching speed, and high temperature operation.
What are the typical applications of STGWA30N120KD?
- Typical applications include solar inverters, motor drives, electric vehicle charging systems, and industrial power supplies.
What is the maximum voltage rating of STGWA30N120KD?
- The maximum voltage rating is 1200V.
What is the on-resistance of STGWA30N120KD?
- The on-resistance is typically low, allowing for efficient power conversion.
Does STGWA30N120KD support high-temperature operation?
- Yes, it is designed to operate at high temperatures, making it suitable for demanding environments.
What is the switching speed of STGWA30N120KD?
- It has a fast switching speed, enabling high-frequency operation in power electronics.
Is STGWA30N120KD suitable for use in electric vehicle charging systems?
- Yes, its high voltage rating and fast switching speed make it well-suited for electric vehicle charging applications.
Can STGWA30N120KD be used in parallel configurations for higher power applications?
- Yes, it can be used in parallel to increase current handling capability in high-power designs.
Are there any specific thermal management considerations for using STGWA30N120KD?
- Proper heat sinking and thermal management are important to ensure optimal performance and reliability in high-power applications.