GP1UD261XK0F

Product Overview

• Category: Optoelectronics
• Use: Infrared Emitting Diode (IRED)
• Characteristics: High efficiency, low power consumption, compact size
• Package: Surface mount package
• Essence: Infrared emitting diode
• Packaging/Quantity: Tape and reel packaging, 3000 pieces per reel

Specifications

• Wavelength: 940nm
• Forward Current: 50mA
• Forward Voltage: 1.2V
• Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UD261XK0F has a standard 3-pin configuration with the following pinout: 1. Anode 2. Cathode 3. No Connection

Functional Features

• High radiant intensity
• Fast response time
• Low forward voltage

Advantages and Disadvantages

Advantages

• High efficiency
• Compact size
• Low power consumption

Disadvantages

• Limited operating temperature range
• Sensitive to electrostatic discharge

Working Principles

The GP1UD261XK0F operates by converting electrical energy into infrared radiation. When a forward current is applied, the diode emits infrared light at a wavelength of 940nm.

Detailed Application Field Plans

The GP1UD261XK0F is widely used in applications such as: - Proximity sensors - Object detection - Remote controls - Optical encoders

Detailed and Complete Alternative Models

Some alternative models to GP1UD261XK0F include: - GP1UX311QS - TSAL6200 - SFH4550

In conclusion, the GP1UD261XK0F is a high-performance infrared emitting diode with a compact design and efficient operation. Its applications span across various industries, making it a versatile component in optoelectronic systems.

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