R1EX24256BSAS0I#K0

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory chip
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Small form factor
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Memory Size: 256 kilobits (32 kilobytes)
• Organization: 32,768 words x 8 bits
• Operating Voltage: 2.7V to 5.5V
• Operating Temperature: -40°C to +85°C
• Interface: Serial I2C (Inter-Integrated Circuit)
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The R1EX24256BSAS0I#K0 IC has the following pin configuration:

1. VCC - Power supply voltage
2. SDA - Serial data input/output
3. SCL - Serial clock input
4. WP - Write protect
5. GND - Ground

Functional Features

• High-speed read and write operations
• Byte-wise random access
• Software write protection
• Self-timed programming cycle
• Automatic erase-before-write capability
• Sequential read function
• Hardware write protection using WP pin

Advantages

• Fast operation speed allows for quick data access
• Low power consumption extends battery life in portable devices
• Small form factor saves space on PCBs
• High endurance ensures reliable data storage
• Wide operating voltage range provides flexibility in various applications

Disadvantages

• Limited memory size compared to other storage options
• Relatively higher cost per bit compared to larger memory chips
• Limited write endurance compared to some newer memory technologies

Working Principles

The R1EX24256BSAS0I#K0 is based on EEPROM technology, which allows for non-volatile data storage. It utilizes an I2C interface for communication with the host microcontroller. The chip can be written to and read from using specific commands sent over the serial bus. The self-timed programming cycle ensures reliable and accurate data storage.

Detailed Application Field Plans

The R1EX24256BSAS0I#K0 is commonly used in various electronic devices that require non-volatile memory storage, such as:

1. Consumer electronics (e.g., smartphones, tablets, digital cameras)
2. Automotive systems (e.g., infotainment systems, instrument clusters)
3. Industrial equipment (e.g., control systems, data loggers)
4. Medical devices (e.g., patient monitoring systems, diagnostic equipment)

Detailed and Complete Alternative Models

1. R1EX24256BSAS0I#K1 - Same specifications, different package (DIP instead of SMT)
2. R1EX24256BSAS0I#K2 - Same specifications, extended temperature range (-40°C to +105°C)
3. R1EX24256BSAS0I#K3 - Same specifications, higher endurance (10 million cycles)

These alternative models provide options for different assembly methods, temperature requirements, and increased write endurance.

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