2SB10630P

Product Category: Transistor

Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capability, low noise, and high frequency performance - Package: TO-220AB - Essence: Power transistor for general-purpose applications - Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications: - Collector-Base Voltage (Vcbo): 120V - Collector-Emitter Voltage (Vceo): 120V - Emitter-Base Voltage (Vebo): 5V - Collector Current (Ic): 8A - Power Dissipation (Pd): 40W - Transition Frequency (ft): 30MHz - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1 (E): Emitter - Pin 2 (B): Base - Pin 3 (C): Collector

Functional Features: - High current gain and power dissipation capability - Low saturation voltage for efficient switching - Suitable for audio amplification and power control applications

Advantages: - Robust construction for reliable operation - Wide operating temperature range - Versatile usage in various electronic circuits

Disadvantages: - Relatively larger package size compared to surface-mount transistors - Higher cost compared to smaller signal transistors

Working Principles: The 2SB10630P operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans: - Audio amplifiers - Power supply circuits - Motor control systems - LED drivers - Switching regulators

Detailed and Complete Alternative Models: - 2SD2390 - TIP31C - MJL21193

This comprehensive entry provides a detailed overview of the 2SB10630P transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.