ON Semiconductor
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
MMBF5460LT1G
Voir les détails DataSheets

MMBF5460LT1G

Introduction

The MMBF5460LT1G is a field-effect transistor (FET) belonging to the category of small signal transistors. This component is commonly used in electronic circuits for amplification and switching applications due to its low power consumption and high input impedance.

Basic Information Overview

  • Category: Small Signal Transistor
  • Use: Amplification and Switching
  • Characteristics: Low power consumption, High input impedance
  • Package: SOT-23
  • Essence: Field-Effect Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 0.3A
  • Total Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The MMBF5460LT1G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High Input Impedance
  • Low Power Consumption
  • Fast Switching Speed

Advantages and Disadvantages

Advantages

  • Low Power Consumption
  • High Input Impedance
  • Fast Switching Speed

Disadvantages

  • Limited Continuous Drain Current
  • Limited Drain-Source Voltage

Working Principles

The MMBF5460LT1G operates based on the principle of field-effect modulation. When a voltage is applied to the gate terminal, it creates an electric field that controls the conductivity of the channel between the drain and source terminals, allowing for amplification or switching of the current flow.

Detailed Application Field Plans

The MMBF5460LT1G is widely used in various electronic applications, including: - Audio Amplifiers - Signal Processing Circuits - Oscillator Circuits - Switching Circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBF5460LT1G include: - 2N7002 - BS170 - J310 - BF862

In conclusion, the MMBF5460LT1G is a versatile small signal transistor with applications in amplification and switching circuits. Its low power consumption and high input impedance make it a popular choice for various electronic designs.

Word Count: 324

Énumérez 10 questions et réponses courantes liées à l'application de MMBF5460LT1G dans les solutions techniques

  1. What is MMBF5460LT1G?

    • MMBF5460LT1G is a N-channel JFET (junction field-effect transistor) designed for use in low-power applications.

  2. What are the key features of MMBF5460LT1G?

    • The key features include low on-state resistance, high forward transfer admittance, and low input capacitance.

  3. What are the typical applications of MMBF5460LT1G?

    • Typical applications include signal amplification, switching circuits, and voltage-controlled resistors.

  4. What is the maximum drain-source voltage for MMBF5460LT1G?

    • The maximum drain-source voltage is 40V.

  5. What is the maximum continuous drain current for MMBF5460LT1G?

    • The maximum continuous drain current is 50mA.

  6. What is the operating temperature range for MMBF5460LT1G?

    • The operating temperature range is -55°C to 150°C.

  7. Can MMBF5460LT1G be used in audio amplifier circuits?

    • Yes, MMBF5460LT1G can be used in low-power audio amplifier circuits.

  8. Is MMBF5460LT1G suitable for battery-powered applications?

    • Yes, MMBF5460LT1G is suitable for battery-powered applications due to its low power consumption.

  9. Does MMBF5460LT1G require external biasing?

    • No, MMBF5460LT1G does not require external biasing as it is a JFET.

  10. Are there any recommended alternative components to MMBF5460LT1G?

    • Some recommended alternatives include J175, J176, and J177 JFETs, depending on specific application requirements.