L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
MJE200STU

MJE200STU

Product Overview

Category

The MJE200STU belongs to the category of power transistors.

Use

It is commonly used in electronic circuits for amplification and switching applications.

Characteristics

  • High voltage capability
  • High current capability
  • Low saturation voltage
  • Fast switching speed

Package

The MJE200STU is typically available in a TO-220 package.

Essence

This power transistor is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

The MJE200STU is usually packaged individually and is available in varying quantities depending on the supplier.

Specifications

  • Collector-Emitter Voltage (VCEO): 250V
  • Collector Current (IC): 4A
  • Power Dissipation (PD): 50W
  • DC Current Gain (hFE): 25-250
  • Transition Frequency (fT): 2MHz

Detailed Pin Configuration

The MJE200STU has a standard TO-220 pin configuration: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High voltage and current handling capabilities
  • Low saturation voltage for efficient switching
  • Fast switching speed for rapid response in electronic circuits

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low saturation voltage
  • Fast switching speed

Disadvantages

  • Relatively low transition frequency compared to some alternative models
  • Higher cost compared to lower power transistors

Working Principles

The MJE200STU operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The MJE200STU finds extensive use in the following applications: - Audio amplifiers - Power supplies - Motor control circuits - Lighting control systems

Detailed and Complete Alternative Models

Some alternative models to the MJE200STU include: - TIP31C - 2N3055 - MJ15003

In conclusion, the MJE200STU power transistor offers high voltage and current capabilities, making it suitable for a wide range of electronic applications. Its fast switching speed and low saturation voltage are advantageous, although it may have limitations in higher frequency applications. When considering alternatives, the TIP31C, 2N3055, and MJ15003 are viable options with similar functionalities.

[Word count: 368]

Énumérez 10 questions et réponses courantes liées à l'application de MJE200STU dans les solutions techniques

  1. What is the maximum collector current of MJE200STU?

    • The maximum collector current of MJE200STU is 4A.
  2. What is the maximum collector-emitter voltage of MJE200STU?

    • The maximum collector-emitter voltage of MJE200STU is 250V.
  3. What is the power dissipation of MJE200STU?

    • The power dissipation of MJE200STU is 50W.
  4. What are the typical applications of MJE200STU?

    • MJE200STU is commonly used in audio amplifiers, power supplies, and general purpose switching applications.
  5. What is the gain (hFE) of MJE200STU?

    • The gain (hFE) of MJE200STU typically ranges from 25 to 250.
  6. Is MJE200STU suitable for high-frequency applications?

    • No, MJE200STU is not recommended for high-frequency applications due to its moderate transition frequency.
  7. What are the thermal characteristics of MJE200STU?

    • The thermal resistance junction to case (RθJC) of MJE200STU is 1.67°C/W.
  8. Can MJE200STU be used in automotive applications?

    • Yes, MJE200STU can be used in automotive applications, provided it meets the specific requirements and standards for automotive electronics.
  9. Does MJE200STU require a heat sink for certain applications?

    • Yes, for high-power applications or when operating at high ambient temperatures, a heat sink may be necessary to ensure proper thermal management.
  10. Are there any common failure modes associated with MJE200STU?

    • Common failure modes for MJE200STU include thermal runaway under high current conditions and breakdown due to excessive voltage stress. Proper design and application considerations can mitigate these risks.