ON Semiconductor
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MBT3906DW1T1G
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MBT3906DW1T1G

Introduction

The MBT3906DW1T1G is a bipolar PNP transistor designed for general purpose amplifier and switching applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Bipolar Transistors - BJT
  • Use: General purpose amplifier and switching applications
  • Characteristics: High current gain, low saturation voltage
  • Package: SOT-363
  • Essence: Small signal transistor
  • Packaging/Quantity: Tape & Reel (3,000 units per reel)

Specifications

  • Collector-Base Voltage (VCBO): -40V
  • Collector-Emitter Voltage (VCEO): -40V
  • Emitter-Base Voltage (VEBO): -5V
  • Continuous Collector Current (IC): -200mA
  • Power Dissipation (Pd): 225mW
  • Transition Frequency (ft): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages

  • Versatile general-purpose transistor
  • Small package size
  • Suitable for high-speed switching applications

Disadvantages

  • Limited power dissipation capability
  • Relatively low collector current rating

Working Principles

The MBT3906DW1T1G operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The MBT3906DW1T1G is commonly used in: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

  • 2N3906
  • BC857B
  • MMBT3906

In conclusion, the MBT3906DW1T1G is a versatile bipolar PNP transistor suitable for various general-purpose amplifier and switching applications. Its compact package and high current gain make it an ideal choice for small signal amplification and fast switching circuits.

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Énumérez 10 questions et réponses courantes liées à l'application de MBT3906DW1T1G dans les solutions techniques

  1. What is the maximum collector current of MBT3906DW1T1G?

    • The maximum collector current of MBT3906DW1T1G is 200mA.

  2. What is the typical hFE (DC current gain) of MBT3906DW1T1G?

    • The typical hFE of MBT3906DW1T1G is 100-300 at a collector current of 10mA.

  3. What is the maximum power dissipation of MBT3906DW1T1G?

    • The maximum power dissipation of MBT3906DW1T1G is 350mW.

  4. What is the Vce (collector-emitter voltage) rating of MBT3906DW1T1G?

    • The Vce rating of MBT3906DW1T1G is 40V.

  5. Is MBT3906DW1T1G suitable for low-power switching applications?

    • Yes, MBT3906DW1T1G is suitable for low-power switching applications due to its low collector-emitter saturation voltage.

  6. Can MBT3906DW1T1G be used in audio amplifier circuits?

    • Yes, MBT3906DW1T1G can be used in audio amplifier circuits due to its high current gain and low noise characteristics.

  7. What are the typical applications of MBT3906DW1T1G in technical solutions?

    • Typical applications include amplification, switching, and voltage regulation in various electronic devices and systems.

  8. Does MBT3906DW1T1G have ESD protection?

    • Yes, MBT3906DW1T1G is designed with ESD protection to ensure reliability in handling electrostatic discharge events.

  9. What is the recommended operating temperature range for MBT3906DW1T1G?

    • The recommended operating temperature range for MBT3906DW1T1G is -55°C to 150°C.

  10. Is MBT3906DW1T1G RoHS compliant?

    • Yes, MBT3906DW1T1G is RoHS compliant, making it suitable for use in environmentally conscious designs.