Category: Semiconductor
Use: Power transistor for general-purpose amplifier and switching applications
Characteristics: High current capability, low collector-emitter saturation voltage
Package: TO-126
Essence: NPN silicon epitaxial planar transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack
Advantages: - High current capability - Low collector-emitter saturation voltage - Complementary to BD681S
Disadvantages: - Moderate transition frequency - Limited power dissipation
The BD682S is designed to amplify and switch electronic signals. When a small current flows into the base of the transistor, it controls a much larger current flowing between the collector and emitter.
The BD682S is commonly used in audio amplifiers, power supplies, and industrial control systems due to its high current capability and low saturation voltage.
Note: The information provided is based on the product specifications available at the time of writing.
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What is the BD682S transistor used for?
What are the key specifications of the BD682S transistor?
Can the BD682S be used in audio amplifier circuits?
What are some typical applications of the BD682S in power supplies?
Is the BD682S suitable for motor control applications?
What are the recommended operating conditions for the BD682S?
Can the BD682S be used in high-frequency applications?
Are there any specific considerations for heat dissipation when using the BD682S?
What are the common alternatives to the BD682S transistor?
Where can I find detailed application notes for using the BD682S in technical solutions?