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2N7000

2N7000

Product Overview

Category

The 2N7000 is a type of field-effect transistor (FET) belonging to the category of small-signal N-channel MOSFETs.

Use

It is commonly used for switching and amplification applications in electronic circuits.

Characteristics

  • Low power consumption
  • High input impedance
  • Small size
  • Low voltage operation

Package

The 2N7000 is typically available in a TO-92 package, which is a widely used through-hole package for transistors.

Essence

The essence of the 2N7000 lies in its ability to efficiently control the flow of current in electronic circuits, making it an essential component in various electronic devices.

Packaging/Quantity

It is often sold in reels or tubes containing multiple units, with quantities varying based on manufacturer and distributor specifications.

Specifications

  • Maximum Drain-Source Voltage: 60V
  • Continuous Drain Current: 200mA
  • Gate-Source Voltage: ±20V
  • On-State Resistance: 5Ω

Detailed Pin Configuration

The 2N7000 has three pins: 1. Gate (G): Controls the conductivity between the source and drain. 2. Drain (D): Connects to the positive supply voltage in most applications. 3. Source (S): Connects to the ground or common reference point.

Functional Features

  • Fast switching speed
  • Low input capacitance
  • High gain

Advantages and Disadvantages

Advantages

  • Low power consumption
  • Small size
  • High input impedance

Disadvantages

  • Limited maximum voltage and current ratings
  • Sensitivity to static electricity

Working Principles

The 2N7000 operates based on the principle of controlling the flow of current between the source and drain terminals using the voltage applied to the gate terminal.

Detailed Application Field Plans

The 2N7000 finds extensive use in various applications, including: - Switching circuits - Amplifier circuits - LED driver circuits - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the 2N7000 include: - BS170 - IRF530 - IRF540 - 2N7002

In conclusion, the 2N7000 is a versatile and widely used FET with a range of applications in electronic circuits, offering a balance of performance and compactness.

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Énumérez 10 questions et réponses courantes liées à l'application de 2N7000 dans les solutions techniques

  1. What is the maximum drain current of 2N7000?

    • The maximum drain current of 2N7000 is typically 200 mA.
  2. What is the maximum gate-source voltage for 2N7000?

    • The maximum gate-source voltage for 2N7000 is typically ±20V.
  3. Can 2N7000 be used for low-power switching applications?

    • Yes, 2N7000 is commonly used for low-power switching applications due to its low threshold voltage and low on-resistance.
  4. What are the typical applications of 2N7000 in electronic circuits?

    • 2N7000 is often used in applications such as small signal amplification, low-side load switching, and level shifting.
  5. Is 2N7000 suitable for use in battery-powered devices?

    • Yes, 2N7000's low threshold voltage and low power consumption make it suitable for use in battery-powered devices.
  6. What is the typical input capacitance of 2N7000?

    • The typical input capacitance of 2N7000 is around 20 pF.
  7. Can 2N7000 be used in high-frequency applications?

    • While 2N7000 can be used in some high-frequency applications, it is more commonly utilized in low to moderate frequency circuits.
  8. What is the typical on-resistance of 2N7000?

    • The typical on-resistance of 2N7000 is around 5 ohms.
  9. Does 2N7000 require a heat sink for normal operation?

    • In most cases, 2N7000 does not require a heat sink for normal operation due to its low power dissipation.
  10. Are there any common failure modes associated with 2N7000?

    • Common failure modes for 2N7000 include overvoltage stress leading to gate oxide damage and excessive drain current causing thermal breakdown. Proper circuit protection and design considerations can mitigate these risks.