NXP USA Inc.
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MRF8P20165WHR3
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MRF8P20165WHR3

Introduction

The MRF8P20165WHR3 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: RF Transistor
  • Use: Power amplification in RF applications
  • Characteristics: High power, high frequency operation
  • Package: TO-270-2
  • Essence: Amplifying RF signals
  • Packaging/Quantity: Individual units

Specifications

  • Frequency Range: 1.8 - 200 MHz
  • Power Output: 16 W
  • Voltage: 28 V
  • Gain: 15 dB
  • Efficiency: 60%

Detailed Pin Configuration

The MRF8P20165WHR3 has a 3-pin configuration: 1. Pin 1: Source 2. Pin 2: Gate 3. Pin 3: Drain

Functional Features

  • High power gain
  • Broad frequency range
  • High efficiency
  • Excellent linearity

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency coverage
  • High efficiency
  • Good linearity

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management

Working Principles

The MRF8P20165WHR3 operates on the principle of amplifying RF signals by controlling the flow of current between its source and drain terminals using the gate voltage.

Detailed Application Field Plans

The MRF8P20165WHR3 is suitable for use in the following applications: - RF power amplifiers - Broadcast transmitters - Radar systems - Industrial heating equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF8P20165WHR3 include: - MRF8P18265H - MRF7S21170HSR5 - MRF6VP41KH

In conclusion, the MRF8P20165WHR3 is a high-power RF transistor with excellent performance characteristics, making it suitable for a wide range of RF power amplification applications.

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Énumérez 10 questions et réponses courantes liées à l'application de MRF8P20165WHR3 dans les solutions techniques

  1. What is the MRF8P20165WHR3?

    • The MRF8P20165WHR3 is a high-power RF transistor designed for use in applications such as base stations, radar systems, and industrial, scientific, and medical (ISM) equipment.

  2. What is the maximum power output of the MRF8P20165WHR3?

    • The MRF8P20165WHR3 has a maximum power output of 165 watts.

  3. What frequency range does the MRF8P20165WHR3 cover?

    • The MRF8P20165WHR3 covers a frequency range of 1805-1880 MHz.

  4. What are the key features of the MRF8P20165WHR3?

    • Some key features of the MRF8P20165WHR3 include high power gain, high efficiency, and excellent thermal stability.

  5. What are some typical applications for the MRF8P20165WHR3?

    • Typical applications for the MRF8P20165WHR3 include cellular base stations, repeaters, and other RF power amplifier applications.

  6. What is the recommended operating voltage for the MRF8P20165WHR3?

    • The recommended operating voltage for the MRF8P20165WHR3 is 32 volts.

  7. Does the MRF8P20165WHR3 require external matching networks?

    • Yes, the MRF8P20165WHR3 requires external matching networks for optimal performance.

  8. What thermal management considerations should be taken into account when using the MRF8P20165WHR3?

    • Adequate heat sinking and thermal management are crucial for maintaining the performance and reliability of the MRF8P20165WHR3.

  9. Is the MRF8P20165WHR3 suitable for pulsed operation?

    • Yes, the MRF8P20165WHR3 is suitable for pulsed operation.

  10. Are evaluation boards or reference designs available for the MRF8P20165WHR3?

    • Yes, evaluation boards and reference designs are available to aid in the implementation of the MRF8P20165WHR3 in technical solutions.