NXP USA Inc.
L'image peut être une représentation.
Voir les spécifications pour les détails du produit.
MRF6S19120HSR3
Voir les détails DataSheets

MRF6S19120HSR3

Product Overview

Category

The MRF6S19120HSR3 belongs to the category of RF Power Transistors.

Use

It is used for high-frequency amplification in various applications such as wireless communication, radar systems, and industrial heating processes.

Characteristics

  • High power gain
  • Broadband performance
  • High efficiency
  • Excellent thermal stability

Package

The MRF6S19120HSR3 is available in a compact and durable package suitable for surface mount technology (SMT) assembly.

Essence

This product is essential for achieving high-power amplification in RF applications while maintaining efficiency and reliability.

Packaging/Quantity

The MRF6S19120HSR3 is typically packaged in reels containing a specific quantity based on customer requirements.

Specifications

  • Frequency Range: 1.93 - 2.17 GHz
  • Output Power: 19 W
  • Gain: 14 dB
  • Efficiency: 55%
  • Voltage: 28 V
  • Package Type: NI-1230H

Detailed Pin Configuration

The MRF6S19120HSR3 features a 4-pin configuration: 1. Gate 1 2. Drain 1 3. Source 1 4. Drain 2

Functional Features

  • High linearity
  • Wide operating voltage range
  • Thermally enhanced package for improved heat dissipation
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency coverage
  • Enhanced thermal management
  • RoHS compliance

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal design for optimal performance

Working Principles

The MRF6S19120HSR3 operates based on the principles of RF amplification using field-effect transistor (FET) technology. It amplifies input RF signals with high power gain and efficiency.

Detailed Application Field Plans

The MRF6S19120HSR3 is well-suited for use in the following applications: - Cellular base stations - Point-to-point radio - Radar systems - Industrial heating equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF6S19120HSR3 include: - MRF6S19120HR3 - MRF6S19120NBR3 - MRF6S19120NBR5

In conclusion, the MRF6S19120HSR3 is a high-performance RF power transistor designed for demanding applications that require high power amplification within the specified frequency range. Its advanced characteristics and functional features make it an essential component in modern RF systems.

[Word Count: 389]

Énumérez 10 questions et réponses courantes liées à l'application de MRF6S19120HSR3 dans les solutions techniques

  1. Question: What is the maximum frequency range of MRF6S19120HSR3?
    Answer: The maximum frequency range of MRF6S19120HSR3 is 1920-1990 MHz.

  2. Question: What is the typical gain of MRF6S19120HSR3?
    Answer: The typical gain of MRF6S19120HSR3 is 16 dB.

  3. Question: What is the typical output power of MRF6S19120HSR3?
    Answer: The typical output power of MRF6S19120HSR3 is 20 W.

  4. Question: What is the operating voltage of MRF6S19120HSR3?
    Answer: The operating voltage of MRF6S19120HSR3 is 28 V.

  5. Question: What is the typical efficiency of MRF6S19120HSR3?
    Answer: The typical efficiency of MRF6S19120HSR3 is 50%.

  6. Question: What type of package does MRF6S19120HSR3 come in?
    Answer: MRF6S19120HSR3 comes in a NI-1230H-4L package.

  7. Question: Is MRF6S19120HSR3 suitable for use in RF amplifiers?
    Answer: Yes, MRF6S19120HSR3 is suitable for use in RF amplifiers.

  8. Question: Can MRF6S19120HSR3 be used in mobile communication applications?
    Answer: Yes, MRF6S19120HSR3 can be used in mobile communication applications.

  9. Question: What are the thermal characteristics of MRF6S19120HSR3?
    Answer: The thermal resistance junction to case (RθJC) of MRF6S19120HSR3 is 0.83°C/W.

  10. Question: Does MRF6S19120HSR3 require external matching networks?
    Answer: Yes, MRF6S19120HSR3 requires external matching networks for optimal performance.