NXP USA Inc.
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AFT26H200W03SR6
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AFT26H200W03SR6 Product Encyclopedia Entry

Introduction

The AFT26H200W03SR6 belongs to the category of high-power RF transistors and is widely used in various applications such as wireless infrastructure, radar systems, and industrial heating. This entry provides a comprehensive overview of the product, including its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: High-Power RF Transistor
  • Use: Wireless infrastructure, radar systems, industrial heating
  • Characteristics: High power handling capability, high-frequency operation, rugged design
  • Package: SMT package
  • Essence: Power amplification in RF applications
  • Packaging/Quantity: Typically available in reels or tubes

Specifications

  • Model: AFT26H200W03SR6
  • Frequency Range: 2.5 - 2.7 GHz
  • Output Power: 200 Watts
  • Voltage: 30 Volts
  • Gain: 15 dB
  • Efficiency: 60%
  • Package Type: NI-1230S-4L

Detailed Pin Configuration

The AFT26H200W03SR6 transistor has a 4-pin configuration: 1. Pin 1: Source 2. Pin 2: Gate 3. Pin 3: Drain 4. Pin 4: Ground

Functional Features

  • High power handling capability
  • Broad frequency range operation
  • Excellent linearity and efficiency
  • Rugged design for reliable performance in harsh environments

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency coverage
  • Reliable and rugged construction
  • High efficiency

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The AFT26H200W03SR6 operates based on the principles of RF power amplification. When biased and driven with an appropriate RF signal, it amplifies the input signal to deliver high-power output at the specified frequency range.

Detailed Application Field Plans

Wireless Infrastructure

  • Used in base station power amplifiers for cellular networks
  • Enables long-range and high-speed data transmission
  • Supports 4G and 5G network deployments

Radar Systems

  • Employed in radar transmitters for target detection and tracking
  • Provides high-power RF signals for long-range surveillance
  • Enables accurate and reliable radar operation

Industrial Heating

  • Utilized in RF heating systems for industrial processes
  • Delivers high-power RF energy for rapid and uniform heating
  • Enables precise control over heating processes

Detailed and Complete Alternative Models

  • AFT05MS004NT1: 50W, 0.5 - 2.5 GHz
  • AFT15MS004NT1: 150W, 0.5 - 2.5 GHz
  • AFT30S004NT1: 300W, 0.5 - 2.5 GHz
  • AFT50S004NT1: 500W, 0.5 - 2.5 GHz

In conclusion, the AFT26H200W03SR6 is a high-power RF transistor designed for demanding applications that require reliable and efficient power amplification. With its broad frequency range, high power output, and rugged design, it serves as a key component in wireless infrastructure, radar systems, and industrial heating applications.

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Énumérez 10 questions et réponses courantes liées à l'application de AFT26H200W03SR6 dans les solutions techniques

  1. What is the AFT26H200W03SR6?

    • The AFT26H200W03SR6 is a high-power RF transistor designed for use in technical solutions requiring high-frequency amplification.

  2. What is the maximum power output of the AFT26H200W03SR6?

    • The AFT26H200W03SR6 has a maximum power output of 26 watts, making it suitable for high-power applications.

  3. What frequency range does the AFT26H200W03SR6 cover?

    • The AFT26H200W03SR6 covers a frequency range of 1800-2200 MHz, making it ideal for applications in the UMTS and LTE bands.

  4. What are the typical applications for the AFT26H200W03SR6?

    • Typical applications for the AFT26H200W03SR6 include base station amplifiers, small cell amplifiers, and other high-power RF amplification solutions.

  5. What is the gain of the AFT26H200W03SR6?

    • The AFT26H200W03SR6 offers a high gain of 17 dB, providing significant signal amplification capabilities.

  6. Does the AFT26H200W03SR6 require any special cooling or heat dissipation measures?

    • Yes, due to its high-power nature, the AFT26H200W03SR6 may require special cooling or heat dissipation measures to ensure optimal performance and reliability.

  7. Is the AFT26H200W03SR6 suitable for outdoor or rugged environments?

    • Yes, the AFT26H200W03SR6 is designed to withstand outdoor and rugged environments, making it suitable for outdoor base station and small cell applications.

  8. What are the key electrical characteristics of the AFT26H200W03SR6?

    • The key electrical characteristics of the AFT26H200W03SR6 include high power gain, high linearity, and low distortion, making it well-suited for demanding RF amplification requirements.

  9. Are there any recommended matching networks or biasing arrangements for the AFT26H200W03SR6?

    • Yes, specific matching networks and biasing arrangements may be recommended for optimal performance, and these should be carefully considered during the design phase.

  10. Where can I find detailed technical specifications and application notes for the AFT26H200W03SR6?

    • Detailed technical specifications and application notes for the AFT26H200W03SR6 can be found on the manufacturer's website or by contacting their technical support team for assistance.