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MXLSMBJ100A
Product Overview
- Belongs to: Electronic Components
- Category: Diode
- Use: Rectification and voltage regulation
- Characteristics: High efficiency, low forward voltage drop
- Package: SMD (Surface Mount Device)
- Essence: Silicon Schottky Barrier Diode
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Forward Voltage Drop: 0.3V
- Reverse Voltage: 30V
- Maximum Continuous Current: 1A
- Operating Temperature Range: -55°C to 125°C
Detailed Pin Configuration
- Pin 1: Anode
- Pin 2: Cathode
Functional Features
- Fast switching speed
- Low power loss
- High thermal stability
Advantages
- Reduced heat generation
- Compact size
- Suitable for high-frequency applications
Disadvantages
- Limited reverse voltage capability
- Sensitive to overvoltage conditions
Working Principles
The MXLSMBJ100A operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed to allow for fast switching and low forward voltage drop.
Detailed Application Field Plans
- Power supplies
- Voltage clamping circuits
- Switching power converters
- RF (Radio Frequency) applications
Detailed and Complete Alternative Models
This comprehensive entry provides an in-depth understanding of the MXLSMBJ100A diode, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.