MXLSMBJ100A

Product Overview

• Belongs to: Electronic Components
• Category: Diode
• Use: Rectification and voltage regulation
• Characteristics: High efficiency, low forward voltage drop
• Package: SMD (Surface Mount Device)
• Essence: Silicon Schottky Barrier Diode
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Forward Voltage Drop: 0.3V
• Reverse Voltage: 30V
• Maximum Continuous Current: 1A
• Operating Temperature Range: -55°C to 125°C

Detailed Pin Configuration

• Pin 1: Anode
• Pin 2: Cathode

Functional Features

• Fast switching speed
• Low power loss
• High thermal stability

Advantages

• Reduced heat generation
• Compact size
• Suitable for high-frequency applications

Disadvantages

• Limited reverse voltage capability
• Sensitive to overvoltage conditions

Working Principles

The MXLSMBJ100A operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed to allow for fast switching and low forward voltage drop.

Detailed Application Field Plans

• Power supplies
• Voltage clamping circuits
• Switching power converters
• RF (Radio Frequency) applications

Detailed and Complete Alternative Models

• 1N5817
• SS14
• BAT54S

This comprehensive entry provides an in-depth understanding of the MXLSMBJ100A diode, including its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.