Microsemi Corporation
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MRF4427R2
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MRF4427R2: Encyclopedia Entry

Introduction

The MRF4427R2 is a high-frequency transistor designed for use in RF amplifiers and other applications requiring high power and efficiency. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Product Overview

  • Category: Electronic Components
  • Use: RF Amplification
  • Characteristics: High Power, High Efficiency
  • Package: TO-272
  • Essence: High-Frequency Transistor
  • Packaging/Quantity: Bulk packaging, quantity varies by supplier

Specifications

  • Frequency Range: 400MHz to 2700MHz
  • Power Gain: 13dB
  • Output Power: 28W
  • Voltage: 12V
  • Current: 1.5A

Detailed Pin Configuration

The MRF4427R2 features a standard three-pin configuration: 1. Emitter (E): Connected to the ground or reference potential. 2. Base (B): Input terminal for controlling the transistor's output. 3. Collector (C): Output terminal for amplified RF signal.

Functional Features

  • High power gain and efficiency
  • Broad frequency range coverage
  • Suitable for various RF amplification applications

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency range coverage
  • Good linearity

Disadvantages

  • Higher cost compared to lower-power transistors
  • Requires careful handling due to sensitivity to static electricity

Working Principles

The MRF4427R2 operates based on the principles of bipolar junction transistors (BJTs), where the input signal at the base terminal controls the flow of current between the emitter and collector, resulting in amplified RF output.

Application Field Plans

The MRF4427R2 is commonly used in the following applications: - RF power amplifiers - Broadcast transmitters - Radar systems - Industrial heating equipment

Alternative Models

For users seeking alternatives to the MRF4427R2, the following models can be considered: - MRF455 - BLF278 - MRFE6VP61K25H

In conclusion, the MRF4427R2 is a high-frequency transistor with excellent power and efficiency characteristics, making it suitable for a wide range of RF amplification applications.

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Énumérez 10 questions et réponses courantes liées à l'application de MRF4427R2 dans les solutions techniques

  1. What is the maximum power dissipation of MRF4427R2?

    • The maximum power dissipation of MRF4427R2 is 150 watts.

  2. What is the typical gain of MRF4427R2 at 900 MHz?

    • The typical gain of MRF4427R2 at 900 MHz is 13 dB.

  3. What is the operating frequency range of MRF4427R2?

    • The operating frequency range of MRF4427R2 is 400-1000 MHz.

  4. What type of package does MRF4427R2 come in?

    • MRF4427R2 comes in a NI-1230H-4L package.

  5. What is the recommended bias voltage for MRF4427R2?

    • The recommended bias voltage for MRF4427R2 is 28 volts.

  6. What is the maximum drain-source voltage of MRF4427R2?

    • The maximum drain-source voltage of MRF4427R2 is 65 volts.

  7. What are some common applications of MRF4427R2?

    • Common applications of MRF4427R2 include RF power amplifiers, transmitters, and industrial, scientific, and medical (ISM) applications.

  8. What is the typical input and output impedance of MRF4427R2?

    • The typical input and output impedance of MRF4427R2 is 50 ohms.

  9. Does MRF4427R2 require external matching networks?

    • Yes, MRF4427R2 typically requires external matching networks for optimal performance.

  10. Is MRF4427R2 RoHS compliant?

    • Yes, MRF4427R2 is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.