TE28F640P30B85A

Product Overview

Category

TE28F640P30B85A belongs to the category of flash memory chips.

Use

It is primarily used for data storage in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 64 megabits (8 megabytes).
• Fast access time: Provides quick read and write operations.
• Reliable: Built with advanced error correction techniques to ensure data integrity.
• Low power consumption: Designed to minimize energy usage.

Package

The TE28F640P30B85A chip comes in a compact package that is compatible with standard surface mount technology (SMT).

Essence

The essence of TE28F640P30B85A lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This flash memory chip is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Memory Size: 64 Mbit
• Organization: 8 M x 8
• Supply Voltage: 2.7V - 3.6V
• Access Time: 85 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The TE28F640P30B85A chip has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect input/acceleration input
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in error correction code (ECC) for enhanced reliability
• Low power consumption in standby mode
• Support for multiple programming algorithms

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Versatile programming options

Disadvantages

• Limited endurance: Flash memory cells have a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

TE28F640P30B85A utilizes the principles of floating gate technology. It stores data by trapping electric charge within insulated floating gate transistors. When a specific voltage is applied, the trapped charge can be detected, allowing for data retrieval. The chip's control circuitry manages the reading, writing, and erasing of data.

Detailed Application Field Plans

TE28F640P30B85A finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Set-top boxes - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to TE28F640P30B85A include: - AT45DB641E-SHN2B-T by Adesto Technologies - S29GL064S90TFI040 by Cypress Semiconductor - MX25L6406EM2I-12G by Macronix International - W25Q64JVZPIQ by Winbond Electronics

These alternative models may have slight variations in specifications and pin configurations, but they serve the same purpose of flash memory storage.

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