MT49H8M36FM-5 TR

Product Overview

Category: Memory ICs
Use: Data storage and retrieval
Characteristics: High-speed, high-density, non-volatile memory
Package: 144-ball FBGA
Essence: Advanced memory technology for various applications
Packaging/Quantity: Tape and reel, 250 units per reel

Specifications

• Part Number: MT49H8M36FM-5 TR
• Memory Type: NAND Flash
• Density: 8Gb (Gigabits)
• Organization: 1G x 36
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: 5ns (nanoseconds)
• Interface: Parallel
• Package Type: FBGA (Fine-pitch Ball Grid Array)
• Pin Count: 144

Detailed Pin Configuration

The MT49H8M36FM-5 TR has a total of 144 pins arranged in a fine-pitch ball grid array configuration. The pinout diagram is as follows:

Functional Features

• High-speed data transfer with a speed of 5ns
• Large storage capacity of 8Gb
• Non-volatile memory retains data even when power is disconnected
• Reliable and durable design for long-term data storage
• Low power consumption for energy efficiency
• Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Large storage capacity accommodates extensive data requirements - Non-volatile memory ensures data retention without power supply - Reliable design minimizes data loss and corruption - Low power consumption reduces energy costs - Wide operating temperature range allows usage in various environments

Disadvantages: - Parallel interface may limit compatibility with certain systems - Higher cost compared to other memory technologies - Limited write endurance compared to some alternative models

Working Principles

The MT49H8M36FM-5 TR is based on NAND flash memory technology. It utilizes a series of floating-gate transistors to store data in a non-volatile manner. The memory cells are organized in a grid-like structure, allowing for efficient storage and retrieval of data. When data is written, electrical charges are trapped in the floating gates, representing the stored information. During read operations, the charges are sensed and converted back into digital data.

Detailed Application Field Plans

The MT49H8M36FM-5 TR is suitable for a wide range of applications that require high-speed, high-density data storage. Some potential application fields include:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Networking equipment
4. Industrial automation
5. Automotive electronics
6. Medical devices
7. Consumer electronics

Detailed and Complete Alternative Models

1. MT29F8G08ABACAWP-IT: 8Gb NAND Flash Memory, TSOP package, 48-pin
2. S34ML08G2D1BWAM000: 8Gb NAND Flash Memory, BGA package, 63-ball
3. IS43TR16256AL-125KBLI: 8Gb DDR3 SDRAM, BGA package, 96-ball
4. MX25L8006EM2I-12G: 8Mb Serial Flash Memory, SOP package, 8-pin
5. W25Q128JVSIQ: 128Mb Serial Flash Memory, SOIC package, 8-pin

These alternative models offer similar storage capacities and functionalities, catering to different package requirements and interface types.

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