MT48H4M16LFB4-8:H

Basic Information Overview

• Category: Memory module
• Use: Storage and retrieval of digital information in electronic devices
• Characteristics: High capacity, fast data transfer rate, low power consumption
• Package: Small outline dual in-line memory module (SODIMM)
• Essence: Dynamic random-access memory (DRAM) module
• Packaging/Quantity: Typically sold individually or in packs of multiples

Specifications

• Part Number: MT48H4M16LFB4-8:H
• Capacity: 64 megabytes (MB)
• Organization: 4 Meg x 16
• Speed: 8 nanoseconds (ns)
• Voltage: 2.5 volts (V)
• Interface: Synchronous DRAM (SDRAM)
• Form Factor: 200-pin SODIMM
• Operating Temperature: 0°C to 85°C

Detailed Pin Configuration

The MT48H4M16LFB4-8:H follows the standard pin configuration for a 200-pin SODIMM module. It consists of multiple pins arranged in two rows on both sides of the module. The specific pinout can be found in the product datasheet.

Functional Features

• High-speed data transfer: The module operates at a speed of 8 ns, allowing for quick storage and retrieval of data.
• Low power consumption: The MT48H4M16LFB4-8:H is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable performance: With its synchronous DRAM technology, the module offers reliable and consistent performance.

Advantages and Disadvantages

Advantages: - High capacity: The module provides a storage capacity of 64 MB, allowing for ample data storage. - Fast data transfer rate: The 8 ns speed ensures efficient data transfer between the module and the device. - Low power consumption: The module's low power requirements make it energy-efficient.

Disadvantages: - Limited capacity: Compared to newer memory modules, the 64 MB capacity may be considered relatively small for certain applications. - Compatibility limitations: The module may not be compatible with all devices due to differences in form factor or voltage requirements.

Working Principles

The MT48H4M16LFB4-8:H operates based on the principles of dynamic random-access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The synchronous DRAM technology ensures synchronized data transfers between the module and the device, enhancing performance.

Detailed Application Field Plans

The MT48H4M16LFB4-8:H is commonly used in various electronic devices that require memory storage, such as: 1. Laptops and notebooks 2. Desktop computers 3. Printers 4. Networking equipment 5. Industrial control systems

Detailed and Complete Alternative Models

1. MT48H4M16LF4-8:H: Similar to the MT48H4M16LFB4-8:H but without the "B" in the part number.
2. MT48H4M16LFB4-10:H: A variant with a slower speed of 10 ns.
3. MT48H4M16LFB4-8IT:H: An industrial temperature range version (-40°C to 85°C) of the module.

These alternative models offer similar functionality and can be considered as substitutes depending on specific requirements.

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