MT47H32M16CC-3E:B TR

Product Overview

Category

MT47H32M16CC-3E:B TR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Volatile memory
• Random access capability
• Low power consumption

Package

MT47H32M16CC-3E:B TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H32M16CC-3E:B TR is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 2GB
• Organization: 32M words x 16 bits
• Data Rate: 1600 Mbps
• Operating Voltage: 1.5V
• Clock Frequency: 800 MHz
• CAS Latency: 11
• Refresh Rate: 8K cycles/64ms

Detailed Pin Configuration

The pin configuration of MT47H32M16CC-3E:B TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | DQ0 | Data Input/Output Bit 0 | | 3 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 69 | VSS | Ground | | 70 | VSS | Ground | | 71 | VREF | Voltage Reference | | 72 | VDD | Power Supply Voltage |

Functional Features

• High-speed data transfer
• Error correction capabilities
• Auto-refresh functionality
• Burst mode operation
• On-die termination (ODT) support
• Serial presence detect (SPD) for automatic configuration

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Error correction capabilities enhance data reliability
• Automatic configuration through SPD

Disadvantages

• Volatile memory, requiring constant power supply to retain data
• Relatively higher cost compared to other memory technologies

Working Principles

MT47H32M16CC-3E:B TR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain data integrity. When a read or write operation is performed, the memory controller accesses the specific memory address and retrieves or updates the stored data.

Detailed Application Field Plans

MT47H32M16CC-3E:B TR finds extensive application in various electronic devices and computer systems, including but not limited to: - Laptops and notebooks - Desktop computers - Servers - Gaming consoles - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H32M16CC-3E:B TR include: - MT47H64M16HR-25E IT:H - MT47H128M8HQ-25E AIT:H - MT47H256M8EB-25E IT:H - MT47H512M4EB-25E IT:H

These models offer similar specifications and functionalities, providing options for different memory capacity requirements.

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