Micron Technology Inc.
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MT47H256M8EB-25E XIT:C TR
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MT47H256M8EB-25E XIT:C TR

Product Overview

Category

MT47H256M8EB-25E XIT:C TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed data access
  • Non-volatile memory
  • Large storage capacity
  • Low power consumption

Package

MT47H256M8EB-25E XIT:C TR is available in a compact and durable package that ensures protection during transportation and handling.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT47H256M8EB-25E XIT:C TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

  • Model: MT47H256M8EB-25E XIT:C TR
  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Capacity: 256 Megabits (32 Megabytes)
  • Speed: 25E (DDR3-1600)
  • Operating Voltage: 1.5V
  • Organization: 256M words x 8 bits x 8 banks
  • Interface: Double Data Rate (DDR) interface

Detailed Pin Configuration

The pin configuration of MT47H256M8EB-25E XIT:C TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. CK
  45. CKE
  46. VSS
  47. DM0
  48. DM1
  49. VCC
  50. VSS

Functional Features

  • High-speed data transfer rate
  • Burst mode operation for efficient data access
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

  • Fast data access speed enhances overall system performance.
  • Large storage capacity allows for storing a significant amount of data.
  • Low power consumption helps in prolonging battery life in portable devices.

Disadvantages

  • Relatively higher cost compared to other memory technologies.
  • Limited endurance, as the memory cells have a finite number of write cycles.

Working Principles

MT47H256M8EB-25E XIT:C TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It uses a clock signal to synchronize data transfers between the memory controller and the memory chip. The data is stored in capacitors within the memory cells, and it needs to be periodically refreshed to maintain its integrity.

Detailed Application Field Plans

MT47H256M8EB-25E XIT:C TR finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H256M8EB-25E XIT:C TR are: - MT47H128M16RT-25E: 128 Megabit DDR3 SDRAM - MT47H512M8HQ-25E: 512 Megabit DDR3 SDRAM - MT47H1G8DM-25E: 1 Gigabit DDR3 SDRAM

These alternative models offer different capacities and features to cater to specific requirements.

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Énumérez 10 questions et réponses courantes liées à l'application de MT47H256M8EB-25E XIT:C TR dans les solutions techniques

Sure! Here are 10 common questions and answers related to the application of MT47H256M8EB-25E XIT:C TR in technical solutions:

  1. Question: What is the capacity of the MT47H256M8EB-25E XIT:C TR?
    Answer: The MT47H256M8EB-25E XIT:C TR has a capacity of 256 megabits (32 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H256M8EB-25E XIT:C TR is 2.7V to 3.6V.

  3. Question: What is the clock frequency supported by this memory module?
    Answer: The MT47H256M8EB-25E XIT:C TR supports a clock frequency of 400 MHz.

  4. Question: Is this memory module compatible with DDR3 interfaces?
    Answer: Yes, the MT47H256M8EB-25E XIT:C TR is compatible with DDR3 interfaces.

  5. Question: What is the data transfer rate of this memory module?
    Answer: The MT47H256M8EB-25E XIT:C TR has a maximum data transfer rate of 800 Mbps.

  6. Question: Can this memory module be used in industrial applications?
    Answer: Yes, the MT47H256M8EB-25E XIT:C TR is designed for industrial temperature ranges (-40°C to +85°C) and can be used in industrial applications.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H256M8EB-25E XIT:C TR does not support ECC.

  8. Question: What is the package type of this memory module?
    Answer: The MT47H256M8EB-25E XIT:C TR comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package.

  9. Question: Can this memory module be used in automotive applications?
    Answer: Yes, the MT47H256M8EB-25E XIT:C TR is AEC-Q100 qualified and can be used in automotive applications.

  10. Question: What is the typical power consumption of this memory module?
    Answer: The typical power consumption of the MT47H256M8EB-25E XIT:C TR is 1.35W (operating) and 0.75W (standby).

Please note that these answers are based on general information about the MT47H256M8EB-25E XIT:C TR and may vary depending on specific implementation details.