MT46V64M8CY-5B:J TR

Product Overview

Category

The MT46V64M8CY-5B:J TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation: The MT46V64M8CY-5B:J TR offers fast data access and transfer rates, making it suitable for applications that demand quick processing.
• Large storage capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip provides ample space for storing data.
• Low power consumption: The chip is designed to consume minimal power, ensuring efficient energy usage in electronic devices.
• Compact package: The MT46V64M8CY-5B:J TR is available in a small form factor package, allowing for easy integration into various electronic systems.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT46V64M8CY-5B:J TR is typically packaged in tape and reel format. Each reel contains a specific quantity of chips, usually around 1000 units.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabits x 8 bits
• Operating Voltage: 3.3V
• Speed Grade: -5B
• Package Type: TSOP (Thin Small Outline Package)
• Temperature Range: Commercial (0°C to +70°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V64M8CY-5B:J TR features a total of 54 pins, each serving a specific function. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. /CAS
45. /RAS
46. /WE
47. /CS
48. /CKE
49. /DQM0
50. /DQM1
51. VDD
52. VDD
53. VSS
54. VSS

Functional Features

The MT46V64M8CY-5B:J TR offers the following functional features:

• Random access: Allows for quick and efficient retrieval of data stored in the memory.
• Burst mode operation: Supports burst read and write operations, enhancing overall data transfer rates.
• Auto-refresh capability: Automatically refreshes the stored data to maintain its integrity over time.
• Self-timed write cycle: Simplifies the write operation by eliminating the need for external timing control signals.
• Low-power standby mode: Enables the chip to enter a low-power state when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• High-speed operation facilitates fast data access and transfer.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption ensures efficient energy usage.
• Compact package allows for easy integration into electronic systems.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• As a DRAM chip, it requires periodic refreshing to maintain data integrity.
• Sensitive to electrical noise and may require additional measures for proper functioning.

Working Principles

The MT46V64M8CY-5B:J TR operates based on the principles of dynamic random access memory. It stores data as charge in tiny capacitors within the chip. To read or write data, the chip utilizes row and column addresses to access specific memory locations. The stored charge needs to be periodically refreshed to prevent data loss.

Detailed Application Field Plans

The MT46V64M8CY-5B:J TR