MT46V32M16TG-5B:J

Product Overview

Category

MT46V32M16TG-5B:J belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Compact package size
• Compatibility with various electronic devices

Package

MT46V32M16TG-5B:J is typically packaged in a small outline dual in-line memory module (SODIMM) or a ball grid array (BGA) package.

Essence

The essence of MT46V32M16TG-5B:J lies in its ability to provide efficient and reliable data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

This product is commonly available in packaging options of single units or in bulk quantities, depending on the requirements of the customer.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed Grade: PC3-10600 (DDR3-1333)
• Operating Voltage: 1.5 Volts
• Refresh Rate: 8K cycles/64ms

Detailed Pin Configuration

The pin configuration of MT46V32M16TG-5B:J is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. CLK
46. CKE
47. ODT
48. VDD

Functional Features

• High-speed data access and transfer
• Support for burst mode operations
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller space.
• Fast data access and transfer rates enhance overall system performance.
• Low power consumption helps prolong battery life in mobile devices.
• Compact package size enables easy integration into various electronic devices.

Disadvantages

• DDR3 technology may not offer the same performance as newer generations of memory, such as DDR4 or DDR5.
• Limited capacity compared to higher-end memory modules.

Working Principles

MT46V32M16TG-5B:J operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When data is requested, the memory controller accesses the specific memory address and retrieves the stored data.

Detailed Application Field Plans

MT46V32M16TG-5B:J finds applications in various electronic devices, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT46V32M16TG-5B:J include: - Samsung K4B1G1646G-BCH9 - Micron MT41K256M16TW-107 - Hynix H5TC2G63FFR-PBA

These alternative models provide comparable specifications and can be used as substitutes depending on the specific requirements of the application.

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