MT46H256M32L4SA-48 WT:C

Basic Information Overview

• Category: Memory module
• Use: This product is a high-speed, low-power Double Data Rate 3 (DDR3) synchronous dynamic random-access memory (SDRAM) module.
• Characteristics:
  • High-speed operation: It operates at a clock frequency of up to 1066 MHz.
  • Low power consumption: The module is designed to consume less power, making it suitable for energy-efficient devices.
  • Large capacity: The MT46H256M32L4SA-48 WT:C has a capacity of 256 Megabytes (MB).
• Package: The module comes in a small outline dual in-line memory module (SODIMM) package.
• Essence: The MT46H256M32L4SA-48 WT:C is an essential component for storing and accessing data in various electronic devices.
• Packaging/Quantity: The module is typically sold individually.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 256 MB
• Speed: Up to 1066 MHz
• Voltage: 1.5V
• Organization: 256M words x 32 bits
• Interface: 204-pin SODIMM

Detailed Pin Configuration

The MT46H256M32L4SA-48 WT:C module has a total of 204 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | DQ0 | Data input/output bit 0 | | 3 | DQ1 | Data input/output bit 1 | | ... | ... | ... | | 203 | VSS | Ground | | 204 | VSS | Ground |

Functional Features

• High-speed operation: The module supports high-speed data transfer, allowing for faster processing and improved system performance.
• Low power consumption: It is designed to minimize power usage, making it suitable for battery-powered devices and energy-efficient systems.
• Error correction: The MT46H256M32L4SA-48 WT:C incorporates error correction code (ECC) functionality, enhancing data integrity and reliability.
• On-die termination (ODT): This feature helps to reduce signal reflections and improve signal quality by matching the impedance of the memory module with the transmission line.

Advantages and Disadvantages

Advantages: - High-speed operation improves system performance. - Low power consumption extends battery life. - ECC functionality enhances data integrity. - ODT reduces signal reflections and improves signal quality.

Disadvantages: - Relatively small capacity compared to higher-end memory modules. - Limited compatibility with older systems that do not support DDR3 technology.

Working Principles

The MT46H256M32L4SA-48 WT:C operates based on the DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are organized into rows and columns. When data needs to be read or written, the memory controller sends commands and addresses to access specific rows and columns. The data is then transferred through the I/O pins using a synchronous clock signal.

Detailed Application Field Plans

The MT46H256M32L4SA-48 WT:C memory module finds applications in various electronic devices, including but not limited to: 1. Laptops and notebooks 2. Desktop computers 3. Servers 4. Networking equipment 5. Industrial control systems 6. Embedded systems

Detailed and Complete Alternative Models

1. MT46H128M32L2KQ-5 IT:A
2. MT46H64M32L2KQ-5 IT:A
3. MT46H32M16LFBF-6 IT:A
4. MT46H16M16LFBF-6 IT:A
5. MT46H8M16LFBF-6 IT:A

These alternative models offer different capacities and specifications to cater to various system requirements.

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