Micron Technology Inc.
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MT41K512M8RH-107:E
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MT41K512M8RH-107:E

Product Overview

Category

MT41K512M8RH-107:E belongs to the category of dynamic random-access memory (DRAM).

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

  • High-density storage capacity
  • Fast data access and transfer rates
  • Low power consumption
  • Reliable performance
  • Wide operating temperature range

Package

MT41K512M8RH-107:E is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

MT41K512M8RH-107:E is typically packaged in trays or reels, with each containing a specific quantity of memory modules. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 4GB
  • Organization: 512M x 8
  • Speed: 107MHz
  • Voltage: 1.5V
  • Interface: 204-pin SODIMM
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT41K512M8RH-107:E is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. NC
  21. A10
  22. A9
  23. A11
  24. A12
  25. A13
  26. A14
  27. A15
  28. VSS
  29. A16
  30. A17
  31. A18
  32. A19
  33. A20
  34. A21
  35. A22
  36. VSS
  37. A23
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. VSS
  45. CLK
  46. CKE
  47. ODT
  48. RESET#
  49. VREFCA
  50. VSS

Functional Features

  • High-speed data access and transfer
  • Automatic refresh capability
  • Error correction code (ECC) support
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operation for efficient data transfer

Advantages and Disadvantages

Advantages

  • High-density storage capacity allows for more data to be stored in a smaller physical space.
  • Fast data access and transfer rates improve overall system performance.
  • Low power consumption helps conserve energy and extend battery life in portable devices.
  • Reliable performance ensures data integrity and system stability.
  • Wide operating temperature range enables usage in various environmental conditions.

Disadvantages

  • DDR3 technology may not offer the same performance as newer generations, such as DDR4 or DDR5.
  • Limited compatibility with older systems that do not support DDR3 memory modules.

Working Principles

MT41K512M8RH-107:E operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. When data is requested, it is accessed and transferred through a series of electrical signals and circuitry.

Detailed Application Field Plans

MT41K512M8RH-107:E finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Industrial automation systems 6. Medical devices 7. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT41K512M8RH-107:E include: - MT41K256M16HA-125:E - MT41K1G8SN-125:E - MT41K512M16HA-125:E - MT41K256M8DA-125:E - MT41K1G8RH-125:E

These alternative models offer similar functionality and characteristics but may differ in terms of capacity, organization, or speed.

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Énumérez 10 questions et réponses courantes liées à l'application de MT41K512M8RH-107:E dans les solutions techniques

Sure! Here are 10 common questions and answers related to the application of MT41K512M8RH-107:E in technical solutions:

  1. Question: What is the capacity of the MT41K512M8RH-107:E memory module?
    Answer: The MT41K512M8RH-107:E has a capacity of 4 gigabits (512 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT41K512M8RH-107:E is 1.35V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT41K512M8RH-107:E supports a maximum clock frequency of 1070 MHz.

  4. Question: Is this memory module compatible with DDR3 or DDR4 systems?
    Answer: The MT41K512M8RH-107:E is compatible with DDR3 systems.

  5. Question: What is the CAS latency of this memory module?
    Answer: The CAS latency of the MT41K512M8RH-107:E is CL15.

  6. Question: Can I use multiple MT41K512M8RH-107:E modules together in a system?
    Answer: Yes, you can use multiple modules together to increase the overall memory capacity.

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: Yes, the MT41K512M8RH-107:E supports ECC for error detection and correction.

  8. Question: What is the form factor of this memory module?
    Answer: The MT41K512M8RH-107:E follows the standard DDR3 SDRAM DIMM form factor.

  9. Question: What is the temperature range for the operation of this memory module?
    Answer: The MT41K512M8RH-107:E has an operating temperature range of -40°C to +85°C.

  10. Question: Is this memory module suitable for industrial applications?
    Answer: Yes, the MT41K512M8RH-107:E is designed to meet the requirements of industrial applications with its wide temperature range and ECC support.

Please note that these answers are based on general information about the MT41K512M8RH-107:E memory module. It's always recommended to refer to the official datasheet or consult the manufacturer for specific details and application requirements.