MT29F64G08CFACBWP-12Z:C

Product Overview

Category

MT29F64G08CFACBWP-12Z:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CFACBWP-12Z:C offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory ensures reliable performance with low power consumption.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained devices.
• Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.
• Long lifespan: MT29F64G08CFACBWP-12Z:C has a long lifespan, making it ideal for long-term data storage.

Package and Quantity

The MT29F64G08CFACBWP-12Z:C is packaged in a BGA (Ball Grid Array) package. It is available in bulk quantities for mass production.

Specifications

• Part Number: MT29F64G08CFACBWP-12Z:C
• Memory Type: NAND Flash
• Capacity: 64 gigabytes
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: BGA
• Package Dimensions: 14mm x 18mm
• Pin Count: 48

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. ALE
28. CLE
29. RE#
30. WE#
31. WP#
32. R/B#
33. CE#
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. GND
48. VCC

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of large blocks of data for efficient memory management.
• Read Operation: Provides fast and reliable data retrieval.
• Wear-Leveling Algorithm: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors during read and write operations.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall system performance.
• Compact package size enables integration into small devices.
• Durable design ensures reliability in harsh environments.
• Long lifespan provides extended usage without frequent replacements.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it becomes unreliable.
• Higher cost per gigabyte compared to other storage technologies.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

MT29F64G08CFACBWP-12Z:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. The data is accessed by applying appropriate voltages to the memory cells and reading the resulting electrical currents.

Detailed Application Field Plans

The MT29F64G08CFACBWP-12Z:C NAND flash memory is widely used in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. - Automotive electronics for data logging, infotainment systems, and firmware storage. - Industrial equipment for storing critical data and firmware updates.

Alternative Models

1. MT29F64G08CBABA
2. MT29F64G08CB