MT29F64G08CECCBH1-12Z:C

Product Overview

Category

MT29F64G08CECCBH1-12Z:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CECCBH1-12Z:C offers a storage capacity of 64 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, making it suitable for demanding applications.
• Low power consumption: The MT29F64G08CECCBH1-12Z:C is energy-efficient, consuming minimal power during operation, which helps prolong battery life in portable devices.
• Compact package: It comes in a small form factor, making it easy to integrate into various electronic devices without occupying much space.

Packaging/Quantity

The MT29F64G08CECCBH1-12Z:C is typically packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F64G08CECCBH1-12Z:C
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F64G08CECCBH1-12Z:C has a standard pin configuration as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | CLE | Command Latch Enable | | 5 | ALE | Address Latch Enable | | 6 | RE# | Read Enable | | 7 | WE# | Write Enable | | 8-15 | IO0-IO7 | Data Input/Output | | 16 | R/B# | Ready/Busy Status |

Functional Features

• Block Erase: The MT29F64G08CECCBH1-12Z:C supports block erase operations, allowing for efficient management of data storage.
• Page Program: It enables fast and reliable programming of data into the memory cells at the page level.
• Read and Write Operations: This NAND flash memory provides high-speed read and write operations, ensuring quick access to stored data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to detect and correct errors, enhancing data integrity.
• Wear-Leveling: It employs wear-leveling techniques to distribute write operations evenly across the memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance suitable for demanding applications.
• Low power consumption helps prolong battery life.
• Compact package facilitates integration into various devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to data loss: Power interruptions during write operations can lead to data corruption or loss.

Working Principles

The MT29F64G08CECCBH1-12Z:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate.

During write operations, data is programmed into the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the electrical charges stored in the memory cells and converting them back into digital information.

Detailed Application Field Plans

The MT29F64G08CECCBH1-12Z:C finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F64G08CBABA: Similar specifications with different package type (BGA)
• MT29F64G08CBACD: Similar specifications with different storage capacity (128